Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor
Ching-Wen Hung,Huey-Ing Chen,Tsung-Han Tsai,Chung-Fu Chang,Tzu-Pin Chen,Li-Yang Chen,Kuei-Yi Chu,Wen-Chau Liu
DOI: https://doi.org/10.1149/1.2838143
IF: 3.9
2008-01-01
Journal of The Electrochemical Society
Abstract:On the basis of a GaAs-based heterostructure field-effect transistor with a catalytic Pd gate film, an interesting hydrogen sensor was fabricated and studied. A study of the hydrogen-induced dipole effect on device performance, including output resistance (ro) , Early voltage (VA) , and the drain saturation current (IDS) operating regime, is reported. A significant change in the relative sensitivity ratio [Sr(%)] was observed in the cutoff region. In addition, a linear dependence between the logarithmic values of response time and hydrogen concentration is consistent with theoretical analysis. Experimentally, a high Sr(%) of 348% in 9970 ppm H2/air was obtained in the cutoff region at 50°C . The width of the IDS operating regime decreased from 115.3 to 108.2 mA/mm with an increase of the hydrogen concentration from air to 9970 ppm H2/air . From the experimental results, it is speculated that the polarization of a dipole layer reduces the depletion region, which results in a substantial change in the two-dimensional electron gas (2DEG) and the effective channel length and shape.
electrochemistry,materials science, coatings & films