Enhanced Surface Blistering Efficiency of H + Implanted Lithium Tantalate by Chemical Reduction Modification
Limin Wan,Chunyang Wu,Ye Yuan,Xinqiang Pan,Yao Shuai,Chuangui Wu,Jun Zhu,Wanli Zhang,Wenbo Luo
DOI: https://doi.org/10.1016/j.apsusc.2023.156978
IF: 6.7
2023-03-11
Applied Surface Science
Abstract:The crystal ion slicing (CIS) fabricated heterogeneously integrated lithium tantalate (LiTaO 3 , LT) thin film is prospective in optical modulators, infrared sensors, and acoustic filters, therefore improving the transferring efficiency of the LT thin film will definitely promote its development and application. In the present work, the chemical reduction method was found effective to enhance the forming ability of H + implantation-induced defects and surface blistering efficiency of lithium tantalate crystal during the CIS process. According to the investigations by XPS, XRD, RBS, Micro-Raman, and TEM on the reduction-induced defects, H + implantation-induced defects, and the surface blistering behavior, the treated black lithium tantalate (BLT) present a higher blistering efficiency, confirming the contribution of reduction-induced defects in implantation and blister formation process than the referenced congruent lithium tantalate (CLT). In detail, the improvement is in ascribing to the existing intrinsic oxygen vacancy defects in BLT. These defects increase the forming efficiency of Ta defects in the implantation process and enhance the diffusion of H + in the blistering formation process, thus decreasing the activation energy for the blistering process and increasing the film exfoliation area. These results highlight an avenue for enhancing ion slicing efficiency of piezoelectric and pyroelectric single crystal oxide.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films