Abstract:Now a days in an industrial application such as telecom, data server, electric vehicle (EV) and aircraft demand a high-power density, highly efficient and compact size with reduce weight power supplies. Wideband gap (WGB) devices like silicon carbide (SiC) and Gallium Nitride (GaN) have been now popular and numerously fulfill these requirements. These WBG devices are commercially available in both discrete and intelligent power module (IPM) packages. In this paper, large signal analysis has been performed for evaluating the line inductors and DC link capacitor parameters for 5kW three phase boost power factor correction rectifier considering the SiC MOSFET C2M0025120D from CREE. The space vector pulse width modulation technique is used to verify the close loop and dynamic stability of the structure. In addition, a thermal modelling has been performed for calculating the MOSFET losses and heat sink resistivity. In order to verify the numerical results, the simulation has been performed using MATLAB PLECS based 5kW three phase boost power factor correction rectifier.

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Simulation on SiC Based Three Phase Boost Power Factor Correction Rectifier Using MATLAB PLECS Model and Its Numerical Analysis Verification

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Integration of Both EMI Filter and Boost Inductor for 1-Kw PFC Converter

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