EFFECTS OF PHYSICAL CHARACTERISTICS ON YBCO HTS THIN FILM BY ARGON ION BEAM ETCHING

Mu Li-Juan,ZHang Xiao-Ping,ZHao Yong-Gang,Wei Bin,Cao Bi-Song,Jiang SHao-Lin

DOI: https://doi.org/10.3969/j.issn.1000-3258.2006.02.009

2006-01-01

Abstract:The physic properties of HTS film by Ar ion etching step for different thickness in the surface was studied in this paper. Four probe measurement results indicated that after the Ar ion etching step, the T_c of YBa_ 2Cu_ 3O_ 7-x(YBCO)film increased, the resistivity was small reduced when etching thickness less than 30nm, but the resistivity increased and the width of the transportation became broad if in over etching step. SEM shows the particles number and size were reduced and tend to flat when increasing etching time. X-ray Diffraction shows the shift of the characteristic (003) peaks and implies that the Ar ion etching can adjust to the oxygen distribution. The current density J_ c kept in the same level and almost didn’t change after Ar ion etching step. A 4-pole HTS filter was fabricated by using such Ar ion etching film and the microwave properties is close to the simulating results. These results are useful for the application of the HTS film in microwave circuits.