Magnetic Relaxation And Critical Current Density Of Mgb2 Thin Films

H. H. Wen,S. L. Li,Z. W. Zhao,H. Jin,Y. M. Ni,W. N. Kang,Hyeong-Jin Kim,Eum-Mi Choi,Sung-Ik Lee
DOI: https://doi.org/10.1103/PhysRevB.64.134505
IF: 3.7
2001-01-01
Physical Review B
Abstract:The magnetic relaxation and critical current density have been measured on a MgB2 thin film in a wide region of temperature with magnetic field up to 8 T. The irreversibility line has also been determined. It is found that the relaxation rate has a very weak temperature dependence below 1/2T(c). showing a clear residual relaxation rate at 0 K, which cannot be easily explained as due to thermally activated flux creep. Furthermore, the relaxation rate has a strong field dependence. The flux dynamics of thin films is very similar to that of high-pressure synthesized bulks although the relaxation rate in thin film is systematically higher than that of a bulk sample. All the results here together with those from bulk samples suggest that the flux dynamics may be dominated by quantum effects, such as quantum fluctuation and tunneling.
What problem does this paper attempt to address?