Abstract:With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of −3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V−1s−1, and sub-threshold swing of 0.38 V dec−1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness.

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability

P‐21: the Effect of Thermal Annealing Sequence on the Performance of Self‐Aligned Top‐Gate A‐igzo TFTs

Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Rapid Thermal Annealing for Carbon Nanotube Thin Film Transistors by a Double-Themral-region Furnace

Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors

Effects of Annealing Temperature on Bias Temperature Stress Stabilities of Bottom-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors

The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

Rapid Thermal Annealing under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs

Stability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing

The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Effects of low‐temperature thermal annealing on interface characteristics in IZO/IGZO dual‐channel thin‐film transistors

Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

Effects of Rapid Thermal Annealing on Electrical-Properties of Heavily-Doped Silicon Molecular-Beam-Epitaxial Layer with B2o3 Doping Source

Effects of NH3 Annealing on Interface and Electrical Properties of Gd-doped HfO2/Si Stack