Verigy 93000 SoC ATE and the Implementation of Bias Current in Test

TAO Xinxuan

DOI: https://doi.org/10.3969/j.issn.1004-4507.2011.01.002

2011-01-01

Abstract:Verigy 93000 SoC test system is a single extended test platform for low cost.It is systematic resolvent of chip test for SoC full development.This paper generally introduces the 93000 ATE and discusses the implementation of bias current.

What problem does this paper attempt to address?

A Novel Bias Circuit Design in Low Power Lcd Driver

C Chen,DP Chen,XM Xu,XG Wen,LN He

DOI: https://doi.org/10.1109/icsict.2004.1435233

2004-01-01

Abstract:The traditional bias circuit in LCD driver by means of resistors dividing voltage consumes power all along as it works. Based on the property of liquid crystal with a large parasitic capacitance and resulting in a great time constant during charge and discharge, a novel bias circuit using dynamic resistors is proposed in this paper. The new bias circuit has been applied in a 32 x 4 LCD driver. The power dissipation in the biasing circuitry part could be reduced by about sixty-six times to more than hundred times.
Design Time Body Bias Selection for Parametric Yield Improvement.

Cheng Zhuo,Yung-Hsu Chang,Dennis Sylvester,David Blaauw

DOI: https://doi.org/10.1109/aspdac.2010.5419802

2010-01-01

Abstract:Circuits designed in aggressively scaled technologies face both stringent power constraints and increased process variability. Achieving high parametric yield is a key design objective, but is complicated by the correlation between power and performance. This paper proposes a novel design time body bias selection framework for parametric yield optimization while reducing testing costs. The framework considers both inter- and intra-die variations as well as power-performance correlations. This approach uses a feature extraction technique to explore the underlying similarity between the gates for effective clustering. Once the gates are clustered, a Gaussian quadrature based model is applied for fast yield analysis and optimization. This work also introduces an incremental method for statistical power computation to further reduce the optimization complexity. The proposed framework improves parametric yield from 39% to 80% on average for 11 benchmark circuits while runtime is linear with circuit size and on the order of minutes for designs with up to 15K gates.
On-chip variable gain temperature compensation amplifier

Xu Zhiwei,Zhang Zijiang,Li Nayu,Li Min,Wang Shaogang,Gao Huiyan

2020-01-01

Abstract:The invention relates to the technical field of integrated circuits. According to the on-chip variable gain temperature compensation amplifier, the bias voltage of a gain control transistor at different temperatures is changed, the ratio of forward gain to negative gain is adjusted, gain control is achieved in a positive and negative offset mode, and then the influence of on-chip temperature changes on device gain is compensated. The temperature compensation amplifier can cover the temperature change from-55 DEG C to 125 DEG C, and has the advantages of being large in gain range, high in compensation precision, low in power consumption, simple in structure and the like.
A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Ruirui Dang,Lijie Yang,Zhihao Lv,Chunyi Song,Zhiwei Xu

DOI: https://doi.org/10.3390/electronics8030266

IF: 2.9

2019-01-01

Electronics

Abstract:Accurate large signal GaAs pHEMT models are essential for devices’ performance analysis and microwave circuit design. This, in turn, mandates precise small signal models. However, the accuracy of small signal models strongly depends on reliable parasitic parameter extraction of GaAs pHEMT, which also greatly influences the extraction of intrinsic elements. Specifically, the parasitic source and drain resistances, R s and R d , are gate bias-dependent, due to the two-dimensional charge variations. In this paper, we propose a new method to extract R s and R d directly from S-parameter measurements of the device under test (DUT), which save excessive measurements and complicated parameter extraction. We have validated the proposed method in both simulation and on-wafer measurement, which achieves better accuracy than the existing state-of-the-art in a frequency range of 0.5–40 GHz. Furthermore, we develop a GaAs pHEMT power amplifier (PA) to further validate the developed model. The measurement results of the PA at 9–15 GHz agree with the simulation results using the proposed model.
Performance Parameter Testing for ADC and DAC IP Cores Without I/O Multiplexing in SoC Using Verigy 93000

Song-wei PEI,Zhao-lin LI,Sheng-long LI,Shao-jun WEI

DOI: https://doi.org/10.3969/j.issn.0372-2112.2013.07.018

2013-01-01

Abstract:IP cores without I/O multiplexing are typically unavoidable to be embedded into SoC due to the necessary consid-erations such as pin constraint and performance optimization during the design stage .Hence ,one of the serious challenges for SoC testing is how to effectively test IP cores without I/O multiplexing because the ports of IP cores without I/O multiplexing cannot be directly connected to the ATE channels .In this paper ,we propose test methods for ADC and DAC IP cores without I/O multiplex-ing using V93000 ATE respectively .In order to test the ADC and DAC IP cores without I/O multiplexing ,test programs are firstly developed and loaded into V93000 to configure the two cores via EMIF bus .Then the digital codes and the analog voltage values re-spectively converted by ADC and DAC IP cores of SoC are captured by V93000 for performance parameter calculation .Experimen-tal results show that the proposed methods are effective .
Diagnosing Bias Runaway in Analog/mixed Signal Circuits

Ketul B. Sutaria,Pengpeng Ren,Athul Ramkumar,Rongjun Zhu,Xixiang Feng,Runsheng Wang,Ru Huang,Yu Cao

DOI: https://doi.org/10.1109/irps.2014.6860595

2014-01-01

Abstract:The degradation of IC reliability is usually a gradual process. However, under some specific circumstance, the degradation rate can be dramatically accelerated, leading to a destructive result. Bias runaway, referring to the rapid increase of the bias voltage in analog/mixed signal (AMS) circuits, is such a case. It occurs when the feedback between the bias current and the effect of channel hot carrier (CHC) turns into positive and thus, uncontrollable. Such a catastrophic phenomenon is highly sensitive to the initial operation condition, as well as transistor gate length. Based on 65nm silicon data, this paper (1) investigates the critical condition that triggers bias runaway, and the impact of gate length tuning, (2) develops compact models and the simulation methodology for circuit diagnosis, and (3) proposes design solutions and the trade-offs to avoid bias runaway. Overall, this work identifies a key issue to the stability of bias generation circuits, which is vitally important to reliable AMS designs.
Improving Source-Follower Buffer For High-Speed Adc Testing

X. P. Fan,P. K. Chan

DOI: https://doi.org/10.1109/APCCAS.2006.342253

2006-01-01

Abstract:An improved CMOS buffer for high-speed ADC testing is presented. It is based on the circuit means to stabilize the dc output voltage of source-follower test buffer through the replica circuit and amplifier in a feedback loop to generate a regulated biasing voltage. With this biasing arrangement, the proposed test buffer maintains high-speed characteristics whilst yet preserving the headroom for test input signal and providing a defined dc output with immunity to variations of process, supply and temperature. In addition, the third-order harmonic distortion of the buffer is analyzed based on a large signal simplified BSIM3 model. The HSPICE simulation results validate the proposed work and correlate well with the distortion analysis on the basis of a standard 0.35 mu m CMOS process at a single 3V supply.
A Case Study of Testing Strategy for AI SoC

Haiying Ma,Rui Guo,Quan Jing,Jing Han,Yu Huang,Rahul Singhal,Wu Yang,Xin Wen,Fanjin Meng

DOI: https://doi.org/10.1109/itc-asia.2019.00024

2019-09-01

Abstract:Recent advances in artificial intelligence (AI) are becoming a driving force behind the technological revolution and industrial transformation leading to economic and social development. Application specific AI SoCs are being developed at different companies to accelerate processing of the data-intensive AI computations. There are many new challenges in designing and implementing Design-For-Test (DFT) logic for AI SoCs. In this paper, we share our experiences with DFT implementation for our AI SoC. To achieve lower power and higher bandwidth for AI SoC, we use high speed Serdes PHY with lower threshold voltage, which uses many SoC pins. Therefore, it has a negative impact on DFT and ATPG due to lack of reusable IOs that can be used as scan test channels. In this paper, we present our solution and tradeoffs made to optimize DFT silicon area overhead, test cost, test coverage, pre-silicon verification run time with ready-to-use silicon bring-up methodologies.
Implementation Method of SOC Concurrent Test Based on ATE

陶新萱

DOI: https://doi.org/10.3969/j.issn.1671-539X.2013.08.018

2013-01-01

Abstract:Concurrent test is a parallel test method,based on the individual hardware resources,with the multi-port characteristic of software,effective parallel test of different circuit is carried out.With the per-pin hardware architecture and test processor per digital channel,V9 3000 ATE fulfills the concurrent test needs.This article gives a study of the concurrent test of SOC based on V9 3000,especially the parallel test method of different frequency.With this method,the test time is reduced effectively compared to the serial test.
A Transient IC Current Measurement and Analysis System Based on Common ATE

Li Xiangyu,Sun Yihe,Lu Yingxi

DOI: https://doi.org/10.13382/j.jemi.2006.02.008

2006-01-01

JOURNAL OF ELECTRONIC MEASUREMENT AND INSTRUMENT

Abstract:An IC transient power supply current measurement and analysis system based on common integrated circuit Auto Test Equipment was built. It met the requirements of IC transient current acquisition, which required 100MHz higher sample rate and large quantity data process capability. The Auto Test Equipment's support board added a resistor between the board supply and the DUT power pins. A mixed signal data-acquisition oscilloscope with 2GSa/s sample rate was used to acquire the transient voltage of the resistor. The test pattern generation, the acquired data management and analysis were all completed by a software tools kit automatically. The software kit integrated the equipments together and improved the data processing capability of this system. This is a low cost solution. This system was used to test an adder chip's transient power successfully.
A novel research on mixed-signal SoC self-hold analog IP core test wrapper design

Yang Jin,Hong Wang,Shiyuan Yang,DaoHeng Niu,Mei Hu

2009-01-01

Abstract:A novel design of self-hold analog IP core test wrapper is proposed for the purpose of rapid and low-cost test access to analog IP cores on mixed-signal System-on-Chip (SoC). The design, which multiplexes the on-chip digital analog converter (DAC) and analog digital converter (ADC) to realize digitalization of analog test stimuli and responses, includes the design of self-hold analog test interfaces (SHATI) and test controller to configure the modes of the test wrapper and the functions of SHATI. Appropriate configuration of the test wrapper can meet the requirements of high frequency test stimuli. Experiments show that high accuracy and high frequency of the test stimuli can be guaranteed by the design of SHATI. The proposed design of analog IP core test wrapper reduces the overhead of DFT area, while realizes digitalization of analog test signals for multi-port analog IP cores without adding extra ADCs and DACs.
Reliability variability simulation methodology for IC design: An EDA perspective

Aixi Zhang,Chunyi Huang,Tianlei Guo,Alvin I. Chen,Shaofeng Guo,Runsheng Wang,Ru Huang,Jushan Xie

DOI: https://doi.org/10.1109/IEDM.2015.7409677

2015-01-01

Abstract:The reliability variation simulation methodology for advanced integrated circuit (IC) design is presented from an Electronic Design Automation (EDA) perspective. Reliability effects, such as hot carrier injection (HCI) and bias temperature instability (BTI), continue to be one of major concerns when devices scale down to smaller sizes. Reliability variability, considering process variation (PV) and aging variation (AV), is becoming critical for circuit reliability and yield. In this paper, we present and compare various reliability variability methodologies that incorporate process and aging variations for circuit simulation. Additionally, the correlation between PV and AV is analyzed. Finally, two representative circuits (ring oscillator and SRAM) are demonstrated with the reliability variation-aware simulation.
A Fully Automated Large-Scale Addressable Test Chip Design with High Reliability

Bo Zhang,Weiwei Pan,Yongjun Zheng,Zheng Shi,Xiaolang Yan

DOI: https://doi.org/10.1109/ecctd.2011.6043609

2011-01-01

Abstract:During the development of modern semiconductor processes, which has increasing complexity and an extremely high number of degrees of freedom, a large number of distinct test structures are required to test and ensure the yield and manufacturability. To increase the utilization of chip area, addressable methodology of test chip is developed. In this paper, we present a novel large-scale addressable test chip development procedure. Based on components for automation, this procedure is fully integrated and able to reduce layout time to 10% and eliminate much of the potential for human error. A 32×32 array on a 45nm technology has been designed and manufactured with this procedure; the silicon test data further prove the reliability and effectiveness of this procedure.
A Novel Digital Compensation Technique for Current Bias Without Additional Power Consumption

Bo Zhao,Huazhong Yang

DOI: https://doi.org/10.1007/s10470-014-0348-3

IF: 1.321

2014-01-01

Analog Integrated Circuits and Signal Processing

Abstract:A new digital compensation technique is proposed for current reference. The current variations induced by deviations of temperature and process are calibrated through a digital method. The circuit structure is simplified, and the problem of instability in conventional analog current bias can be overcome since the digital part cut off the closed compensation loop. Designed with 0.18 μm CMOS technology, the output current can be calibrated to 100 μA with a maximum error of ±0.3 μA under all the process corners, no matter how the temperature changes in an ultra-wide range of −116 to 160 °C. In addition, the current precision can be maintained as the load voltage varies in the range of 0.31–1.04 V, and the load sensitivity is about 8,000 ppm/V. The digital part can be shut down after the calibration phase, so no additional power will be consumed except the bias itself.
A Novel BIST Approach for Testing Input/Output Buffers in SOCs

Lei Chen,Zhiping Wen,Zhiquan Zhang,Wang Min

DOI: https://doi.org/10.1109/CAS-ICTD.2009.4960760

2009-01-01

Abstract:A novel Built-in Self-Test (BIST) approach to test the configurable Input/Output buffers in Xilinx Virtex series SOCs using Hard Macro has been proposed in this paper. The proposed approach can completely detects single and multiple stuck-at gate-level faults as well as associated routing resources in I/O buffers. The proposed BIST architecture has been implemented and verified on Xilinx Virtex series FPGAs. Only total of 10 configurations are required to completely test the I/O buffers of Virtex devices.
Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 °C

Welder F Perina,Joao Antonio Martino,Eddy Simoen,Anabela Veloso,Paula Ghedini Der Agopian

DOI: https://doi.org/10.1088/1361-6641/ac1310

IF: 2.048

2021-08-03

Semiconductor Science and Technology

Abstract:Current mirrors (CMs) are essential building blocks for biasing integrated circuits. The gate-all-around silicon nanosheet MOSFETs (GAA-NS) are excellent candidates for the sub 7 nm technology node. In this work, CMs designed with GAA-NS are studied for the first time. This study is performed from room temperature to 200 °C using Verilog-A with Look Up Table based on experimental data of n- and p-type GAA-NS for circuit simulation. The current source (reference current) that supplies the CM is designed with an inverter with feedback for simplicity. Due to the zero temperature coefficient (ZTC) region, multiple designs are made to evaluate each type of biasing (before, after and in the ZTC region). Symmetric and asymmetric VTH for n- and p-type GAA-NS are also analyzed. The asymmetric approach presents a compliance voltage of 0.7 V and 0.8 V, for an n- and p-mirror, respectively, while the symmetric one yields a compliance voltage of 0.75 V for both mirror types, and errors lower than 6%, for the design biasing the transistors before the ZTC region.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
A Low-Cost On-Chip Built-In Self-Test Solution for ADC Linearity Test

Tao Chen,Chulhyun Park,Hao Meng,Dadian Zhou,Jose Silva-Martinez,Randall L. Geiger,Degang Chen

DOI: https://doi.org/10.1109/tim.2019.2936716

IF: 5.6

2020-06-01

IEEE Transactions on Instrumentation and Measurement

Abstract:State-of-the-art analog-to-digital converter (ADC) built-in self-test (BIST) methods relax the test stimulus linearity but require a constant voltage shift during testing. A low-cost on-chip BIST solution with a modified R2R digital-to-analog converter (DAC) structure is developed as a signal generator and a voltage shift generator for ADC linearity test. The proposed DAC is a subradix-2 R2R DAC with a constant voltage shift generation capability. The subradix-2 architecture avoids positive voltage gaps caused by random mismatches, which relaxes the DAC matching requirements and reduces the design area. The DAC is fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 40-nm technology with a small area of 0.02 mm2. The matching of the 14-bit DAC is only at the 7-bit level. Measurement results show that it is capable of testing a 15-bit ADC accurately with 0.5 least-significant bit (LSB) estimation error.

engineering, electrical & electronic,instruments & instrumentation
A SOC Test Circuit Design and Implement Based on JTAG

Guoqiang Bai

2009-01-01

Abstract:In this paper,a new test method was presented.This method was based on JTAG protocol.The JTAG instructions were extended and the extended test instructions can be download to SOC through JTAG.The test results can be also feedback through JTAG.The IP and memory in SOC design can be well tested.The test process can be configured flexibly,and the problem occurred in test can be fixed rapidly.
Bias Temperature Instability Model Using Dynamic Defect Potential for Predicting CMOS Aging

Runchen Fang,Ian Livingston,Ivan Sanchez Esqueda,Michael Kozicki,Hugh Barnaby

DOI: https://doi.org/10.1063/1.5027856

IF: 2.877

2018-01-01

Journal of Applied Physics

Abstract:This paper describes a new approach for modeling bias-temperature instability (BTI) in nanoscale transistors. The model uses non-iterative surface potential solvers enhanced with dynamic defect potential equations to enable accurate, physics-based circuit level simulations that incorporate BTI effects. Defect maps constructed from experimental data reported on high-k-metal-gate bulk complementary metal-oxide-semiconductor devices are used to parameterize the defect potential equation. By implementing the enhanced surface potential model in Verilog-A, both DC and AC BTI aging effects in combinational circuits are simulated and the results compared conventional threshold voltage shift methods for BTI modeling.
On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test

Jinyuan Li,Yunong Liu,Yaosheng Li,Zhongyuan Chen,Chunsheng Guo,Hao Li

DOI: https://doi.org/10.1109/access.2021.3057538

IF: 3.9

2021-01-01

IEEE Access

Abstract:In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency. To address this problem, the law of the variation in leakage current with temperature for the reverse-bias state of a device is derived and utilized to establish a temperature calibration curve, with which the online measurement of the insulate-gate bipolar transistor module chip temperature can be implemented directly by real-time monitoring of device leakage current in high-temperature reverse-bias test. The method we proposed solves the problem of large measurement error in chip temperature obtained by traditional thermal resistance calculation method. In addition, real-time chip temperature can be monitored without introducing additional test circuit or HTRB interruption experiment. To demonstrate the effectiveness of the proposed method, the switching small-current temperature measurement method is used to make comparison, and the experiment result indicates that the temperature of the chip in the blocking test can be obtained with high precision by using the leakage current measurement method presented in this work.

computer science, information systems,telecommunications,engineering, electrical & electronic

Verigy 93000 SoC ATE and the Implementation of Bias Current in Test

A Novel Bias Circuit Design in Low Power Lcd Driver

Design Time Body Bias Selection for Parametric Yield Improvement.

On-chip variable gain temperature compensation amplifier

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Performance Parameter Testing for ADC and DAC IP Cores Without I/O Multiplexing in SoC Using Verigy 93000

Diagnosing Bias Runaway in Analog/mixed Signal Circuits

Improving Source-Follower Buffer For High-Speed Adc Testing

A Case Study of Testing Strategy for AI SoC

Implementation Method of SOC Concurrent Test Based on ATE

A Transient IC Current Measurement and Analysis System Based on Common ATE

A novel research on mixed-signal SoC self-hold analog IP core test wrapper design

Reliability variability simulation methodology for IC design: An EDA perspective

A Fully Automated Large-Scale Addressable Test Chip Design with High Reliability

A Novel Digital Compensation Technique for Current Bias Without Additional Power Consumption

A Novel BIST Approach for Testing Input/Output Buffers in SOCs

Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 °C

A Low-Cost On-Chip Built-In Self-Test Solution for ADC Linearity Test

A SOC Test Circuit Design and Implement Based on JTAG

Bias Temperature Instability Model Using Dynamic Defect Potential for Predicting CMOS Aging

On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test