Room Temperature CO Gas Sensing Using Zn-doped In2O3 Single Nanowire Field Effect Transistors

Nandan Singh,Chaoyi Yan,Pooi See Lee
DOI: https://doi.org/10.1016/j.snb.2010.07.051
2010-01-01
Abstract:We demonstrate a room temperature sensing of CO gas (1–5ppm) using high performance single Zn-doped In2O3 nanowire field effect transistors (Zn–In2O3 NW-FETs). Zn–In2O3 nanowires were grown in a horizontal CVD furnace; single Zn–In2O3 NW-FETs were fabricated using SiNx dielectric layer and bottom gate. Electrical measurements on the NW-FETs showed high performance devices, with a high “ON” current of 8×10−6A at a 5V drain voltage, high on-off ratio of ∼106 and electron mobility of 139cm2V−1s−1. Sensing properties of CO gas were studied using these NW-FETs at room temperature. Doping of Zn2+ into the In2O3 NW enhances the sensor response compared to pure In2O3 nanowire. A good selectivity of CO gas over NO and NO2 can also be achieved. The improved sensor response at room temperature is attributed to the defects created and a change in conductivity of the nanowire upon Zn-doping. Significant negative threshold voltage shift of −3.5V was observed after exposure to a low concentration of CO gas at 5ppm. This approach represents an important step towards the room temperature sensing of hazardous gas.
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