Abstract:Over the past few years, wide and direct band gap semiconductors have been intensively studied for their application as blue and ultraviolet light emitters. As a wide gap semiconductor, ZnO has a wide band gap (3.37 eV) and a large binding energy (60 meV). Therefore, ZnO is considered as one of the most promising candidates for short wavelength optoelectronics devices, and it is very important to conduct further studies of the properties of ZnO thin films.In this paper, indium-doped zinc oxides was prepared by radio frequency (rf) reactive co-sputtering on silicon (100) substrate at 430 ℃. Sputtering target were consist of metal zinc (99.99%) and metal indium (99%). Indium content is about 3% (the ratio of indium slices area to that of whole target) on the target. The sputtering gas is a mixture gas of argon (99.97%) and oxygen (99.95%), the partial pressure ratio of oxygen is 0.4. The structure, surfaces morphology, type of conductivity, electrical resistivity and PL spectra of the sample were characterized by X-ray diffractometer, scanning electron microscopy, hot probe, four-point probe and fluorescent spectrophotometer, respectively. There are four main ZnO diffraction peaks in the glancing angle X-ray diffraction patterns, and no diffraction peaks of In_2O_3 or Zn_2In_2O_5 are observed. Therefore, we think that polycrystalline ZnO thin films was prepared by RF reactive co-sputtering . The θ-2θ scan mode X-ray diffraction patterns indicated that the film has highly c-axis orientation and low biaxial compressive stress (0.74 GPa). The 2θ angles of (002) diffraction peak is 34.48° and the full width at half maximum is 0.376°. The surface of the sample was smooth and flat. Compared with un-doped ZnO thin films, low resistivity (1.6 Ω·cm) n-type ZnO thin film was deposited on silicon (100) by doped indium. The blue-violet photoluminescence bi-peak located at 415 nm and at 433 nm is observed when exited with 340 nm wavelength in the photoluminescence (PL) spectrum at room temperature. In this paper, we think that the peak at 415 nm comes from In impurity defects and the peak at 433 nm originates from Zn interstitial defects.

Preparation of ZnO：In Transparent Conductive Oxide Thin Films for Silicon Thin Film Solar Cell by Ultrasonic Spray Pyrolysis

Transparent P-Type Conducting Indium-Doped SnO2 Thin Films Deposited by Spray Pyrolysis

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Preparation of In-doped ZnO Films on Si Substrates Using Radio Frequency (rf) Reactive Co-sputtering Technique

The fabrication and application of ZnO:Al thin films in low-frequency inductively coupled plasma fabricated silicon solar cell

Fabrication of in Doped ZnO Thin Films by Spray Pyrolysis As Photoanode in DSSCs

PREPARATION OF ZnO THIN FILM BY MAGNETRON SPUTTERING

Investigation of In2O3:SnO2 films with different doping ratio and application as transparent conducting electrode in silicon heterojunction solar cell

Preparation of Al Doped ZnO Transparent Conductive Films by Ultrasonic Spray Pyrolysis

Preparation and optical properties of ZnO thin films

Preparation of ZnIn_2S_4 Thin Film by Spray Pyrolysis and Its Photoelectrochemical Characteristic

ZnO-Doped In<sub>2</sub>O<sub>3</sub> Front Transparent Contact Enables >24.0% Silicon Heterojunction Solar Cells

Synthesis and Electrical Characteristic of P-type ZnO Film on Indium-Tin-oxide Glass Substrate by Ultrasonic Spray Pyrolysis

Study of ZnO:Al Films for Silicon Thin Film Solar Cells

Preparation and Study of Properties of Indium-Doped ZnO Films on Si Substrates

A Study of ZnO:Al Thin Films Reactively Sputtered under the Control of Target Voltage for Application in Cu(In,Ga)Se2 Thin Film Solar Cells

Synthesis of ZnO:Al Transparent Conductive Thin Films Using Sol-gel Method

ZnO‐doped In2O3 front transparent contact enables >24.0% silicon heterojunction solar cells

The properties of sol-gel processed indium-doped zinc oxide semiconductor film and its application in organic solar cells

Characterization of Surface Morphology and Light Scattering of Transparent Conducting ZnO:Al Films as Front Electrode for Silicon Thin Film Solar Cells