Abstract:Twisted double bilayer graphene has recently emerged as an interesting moiré material that exhibits strong correlation phenomena that are tunable by an applied electric field. Here we study the atomic and electronic properties of three different graphene double bilayers: double bilayers composed of two AB stacked bilayers (AB/AB), double bilayers composed of two AA stacked bilayers (AA/AA) as well as heterosystems composed of one AB and one AA bilayer (AB/AA). The atomic structure is determined using classical force fields. We find that the inner layers of the double bilayer exhibit significant in-plane and out-of-plane relaxations, similar to twisted bilayer graphene. The relaxations of the outer layers depend on the stacking: atoms in AB bilayers follow the relaxations of the inner layers, while atoms in AA bilayers attempt to avoid higher-energy AA stacking. For the relaxed structures, we calculate the electronic band structures using the tight-binding method. All double bilayers exhibit flat bands at small twist angles, but the shape of the bands depends sensitively on the stacking of the outer layers. To gain further insight, we study the evolution of the band structure as the outer layers are rigidly moved away from the inner layers, while preserving their atomic relaxations. This reveals that the hybridization with the outer layers results in an additional flattening of the inner-layer flat band manifold. Our results establish AA/AA and AB/AA twisted double bilayers as interesting moiré materials with different flat band physics compared to the widely studied AB/AB system.

Infrared and Raman spectra of AA-stacking bilayer graphene.

Heavy Doped ABA Stacked Trilayer Graphene: Triple Splitting of Its Raman G Peak

Landau Level Spectrum Of Aba- And Abc-Stacked Trilayer Graphene

Raman Characterization of ABA- and ABC-stacked Trilayer Graphene.

Effect of bilayer stacking on the atomic and electronic structure of twisted double bilayer graphene

AA-Stacked Borophene-Graphene Bilayer With Covalent Bonding: Ab Initio Investigation of Structural, Electronic and Elastic Properties.

Structural and electronic properties of AB- and AA-stacking bilayer-graphene intercalated by Li, Na, Ca, B, Al, Si, Ge, Ag, and Au atoms

Magnetic Oscillation Of Optical Phonon In Aba- And Abc-Stacked Trilayer Graphene

Second-order Overtone and Combinational Raman Modes of Graphene Layers in the Range of 1690 Cm-1 to 2150 Cm-1

Second-order overtone and combination Raman modes of graphene layers in the range of 1690-2150 cm(-1).

Second-Order Overtone and Combination Raman Modes of Graphene Layers in the Range of 1690−2150 cm<sup>−1</sup>

AA Bilayer Graphene on Si-terminated SiO 2 under Electric Field

Rich magneto-absorption spectra in AAB-stacked trilayer graphene

Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy.

Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy

Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model

A comparative investigation of an AB- and AA-stacked bilayer graphene sheet under an applied electric field: A density functional theory study

Unraveling Stacking Transitions in Twisted Bilayer Graphene: Insights From Intralayer and Interlayer Processes

Electron-infrared phonon coupling in ABC trilayer graphene

Electronic and optical properties of graphite-related systems

Infrared resonance Raman of bilayer graphene: signatures of massive fermions and band structure on the 2D peak