Effects of V<SUP>5+</SUP> Substitution on the Dielectric Properties of Mg<SUB>4</SUB>(SbNb<SUB>1-x</SUB>V<SUB>x</SUB>)O<SUB>9</SUB> Ceramics: Effects of V<SUP>5+</SUP> Substitution on the Dielectric Properties of Mg<SUB>4</SUB>(SbNb<SUB>1-x</SUB>V<SUB>x</SUB>)O<SUB>9</SUB> Ceramics

Guo-Guang YAO,LIU Peng
DOI: https://doi.org/10.3724/SP.J.1077.2008.00877
IF: 1.292
2008-01-01
Journal of Inorganic Materials
Abstract:The effects of V5+ substitution on the sintering characters, microstructure and microwave dielectric properties of Mg-4(SbNb1-xVx)O-9 ceramics were investigated. Results show that a small amount of V5+ substitution for Nb5+ can lower the sintering temperature of Mg-4(Nb2-xSbx)O-9 drastically. In all composition range investigated, the sintered ceramics show single phase with corundum structure. With increasing of V5+ content, the dielectric constant (epsilon) and quality factor (Q . f) increase and thereafter decrease, respectively, the temperature coefficient of resonant frequencies tau(f) decreases which is due to the strengthened B site-bond valence caused by V5+ substitution. The ceramics with x=0.15 sintered at 1250 degrees C has a relative dielectric constant epsilon(r) of 9.98, a quality factor Q . f value of 20248GHz (at 8GHz) and a temperature coefficient of resonant frequencies tau(f) value of -23.3 X 10(-6) K-1.
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