Tapered Cu Pattern Metallization by Electrodeposition Through Mask

Shrane Ning Jenq,Chi Chao Wan,Yung Yun Wang,Hung Wei Li,Po Tsun Liu,Jing Hon Chen
DOI: https://doi.org/10.1149/1.2236375
2006-01-01
Electrochemical and Solid-State Letters
Abstract:A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step. (c) 2006 The Electrochemical Society.
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