Inversion-Mode Self-Aligned <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ </tex></formula> N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

jianqiu lin,S. J. Lee,H. J. Oh,G. Q. Lo,D. L. Kwong,D. Z. Chi

DOI: https://doi.org/10.1109/LED.2008.2001766

IF: 4.8157

2008-01-01

IEEE Electron Device Letters

Abstract:A high-performance In0.53Ga0.47As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH4)(2)S treatment, the chemical vapor deposition HfAl0 growth on Ino.53Gao.47As. exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 mn shows a gate leakage current density as low as 2.5 x 10(-7) A/cm(2) at V, of I V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600 degrees C for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an Ino.53Gao.47As nMOSFET shows well-performed I-d-V-d and I-d-V-g characteristics. The record high peak electron mobility, of 1560 cm(2)/Vs has been achieved without any correction methods considering interface charge and parasitic resistance.