Unidirectional Growth of Molybdenum Dioxide Nanoflakes on C-sapphire Substrate Via Buffer Layer Induction
Di Wu,Benxuan Li,Zixuan Wang,Li Yuan,Haohui Ou,Zelong Li,Tianrong Yi,Yuedong Wang,Jidong Liu,Qiaoyan Hao,Xiaoliang Weng,Yu-Jia Zeng,Han Huang,Fangping Ouyang,Wenjing Zhang
DOI: https://doi.org/10.1016/j.matchar.2024.114307
IF: 4.537
2024-01-01
Materials Characterization
Abstract:Unidirectional growth, a novel and promising approach, is a key method for synthesizing large-scale single crystals of ultra-thin materials. In this study, we present a unique and convenient method for the growth of molybdenum dioxide (MoO2) nanoflakes on a c-sapphire substrate, achieving uniform orientation. Specifically, the MoO2(100) and MoO2 < 021> are aligned parallel to sapphire(0001) and sapphire<1210>, respectively. A crucial observation in our study is the presence of a buffer layer between the as-grown MoO2 and c-sapphire. This buffer layer is essential in overcoming the limitation of lattice mismatch, thereby facilitating the unidirectional growth of MoO2. The introduction of reductants, such as H-2 and sulfur vapor, is critical for the formation of this buffer layer. Electrical measurements indicate that the electrical conductivity of the as-grown MoO2 nanoflake is approximately 3.91 x 10(6) S/m at 300 K, which is comparable to other metallic nanomaterials. In addition, magnetotransport measurements reveal that the as-grown MoO2 nanoflakes exhibit a temperature-dependent linear magnetoresistance (MR) under magnetic fields. These findings not only demonstrate a method for the unidirectional growth of MoO2 on the c-sapphire substrate but also have significant implications for the application of MoO2 in transparent electrodes and the fabrication of integrated devices based on MoO2.