Abstract:This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a light n-type current spreading layer (NCSL) under the p-body. The n-type conductive pillars and the light n-type current spreading layer provide two paths to and promote the diffusion of a transverse current in the epitaxial layer, thus improving the specific on-resistance (R on,sp). There are three p-type pillars in the modified structure, with the p-type pillars on both sides playing the same role. The p-type conductive pillars relieve the electric field (E-field) in the corner of the trench bottom. Two-dimensional simulation (silvaco TCAD) indicates that R on,sp of the modified structure, and breakdown voltage (V BR) are improved by 22.2% and 21.1% respectively, while the maximum figure of merit ( FOM=VBR2/Ron,sp ) is improved by 79.0%. Furthermore, the improved structure achieves a light smaller low gate-to-drain charge (Q gd) and when compared with the conventional UMOSFET (conventional-UMOS), it displays great advantages for reducing the switching energy loss. These advantages are due to the fact that the p-type conductive pillars and n-type conductive pillars configured under the gate provide a substantial charge balance, which also enables the charge carriers to be extracted quickly. In the end, under the condition of the same total charge quantity, the simulation comparison of gate charge and OFF-state characteristics between Gauss-doped structure and uniform-doped structure shows that Gauss-doped structure increases the V BR of the device without degradation of dynamic performance.

Improved Double-Recessed 4h-Sic Mesfets Structure With Recessed Source/Drain Drift Region

Simulation of improved 3D tri-gate 4H-SiC MESFETs with recessed drift region

Improved characteristics of 4H-SiC MESFET with multi-recessed drift region

Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region

Improved Characteristics Of4h-Sicmesfetwithmulti-recessed Drift Region

Improved 4H-SiC Metal–Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications

Improved Dual-Channel 4H-Sic Mesfets with High Doped N-Type Surface Layers and Step-Gate Structure

High breakdown voltage 4H-SiC MESFETs with floating metal strips

An Improved 4H-SiC MESFET with a Partially Low Doped Channel

Experimental and Numerical Analysis of the Multi-Recessed Gate Structure for Microwave Silicon Carbide Power MESFETs

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

Improved 4H-Sic UMOSFET with Super-Junction Shield Region

Numerical Analysis on the 4H-Sic MESFETs with a Source Field Plate

Effects of a multi-recessed gate in microwave 4H-SiC power MESFETs

High Performance 4H-Sic MESFETs with a Source Field Plated Structure

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

An improved structure of 3.3kV 4H-SiC VDMOSFETs with lower on-resistance and reverse transfer capacitance

Simulation Study of a Novel 4H-Sic Split Gate Double Trench MOSFET with Side Wall Gate