Abstract:The interface defects of core-shell colloidal quantum dots (QDs) affect their optoelectronic properties and charge transport characteristics. However, the limited available strategies pose challenges in the comprehensive control of these interface defects. Herein, we introduce a versatile strategy that effectively addresses both surface and interface defects in QDs through simple post-synthesis treatment. Through the combination of fine chemical etching methods and spectroscopic analysis, we have revealed that halogens can diffuse within the crystal structure at elevated temperatures, acting as "repairmen" to rectify oxidation and significantly reducing interface defects within the QDs. Under the guidance of this protocol, InP core/shell QDs were synthesized by a hydrofluoric acid-free method with a full width at half-maximum of 37 nm and an absolute quantum yield of 86%. To further underscore the generality of this strategy, we successfully applied it to CdSe core/shell QDs as well. These findings provide fundamental insights into interface defects engineering and contribute to the advancement of innovative solutions for semiconductor nanomaterials.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to effectively repair the interface defects in core/shell quantum dots (QDs) to improve their photoelectric properties and charge - transfer characteristics. Specifically, interface defects will affect the optical and electronic properties of quantum dots, leading to carrier localization and a decrease in the photoluminescence quantum yield (PLQY). However, the existing repair strategies are limited and it is difficult to comprehensively control these interface defects. To solve this problem, the authors proposed a general post - processing strategy. Through simple post - synthesis treatment, halogen ions are used to penetrate into the quantum dots to repair surface and interface defects. This method, through fine - chemical etching and spectral analysis, reveals that halogens can diffuse into the crystal structure at high temperatures, acting as "repairers" to repair oxidation and significantly reduce the interface defects in quantum dots. ### Main research contents: 1. **Problem background**: - Core/shell quantum dots have wide applications in electronics and photovoltaics due to their tunable light absorption, high color purity, controllable electron transfer, and solution processability. - Interface defects will lead to the formation of trap states and affect the photoelectric properties of quantum dots. - The existing repair strategies are limited and it is difficult to comprehensively control these defects. 2. **Solution**: - A new method for repairing interface defects through halogen - ion penetration was proposed. - Halogen ions can not only be combined on the surface through ligand coordination, but also gradually penetrate into the quantum dots at high temperatures to combine with core cations, effectively alleviating core oxidation and significantly reducing interface defects. 3. **Experimental verification**: - Using this method, InP and CdSe core/shell quantum dots were successfully synthesized, and their excellent optical properties were demonstrated. - The InP multi - shell - layer quantum dots showed a full - width at half - maximum (FWHM) of 37.0 nm and an absolute photoluminescence quantum yield (PLQY) of 86%. 4. **Mechanism discussion**: - Through means such as X - ray diffraction (XRD), transmission electron microscopy (TEM), and X - ray photoelectron spectroscopy (XPS), the diffusion behavior of halogen ions in quantum dots and their mechanism of action in repairing interface defects were studied in detail. 5. **Temperature - dependence**: - It was found that the diffusion of halogen ions is temperature - dependent, and high temperatures are helpful for more halogens to enter the quantum dots for defect repair. ### Conclusion: This research provides a general and effective strategy for repairing interface defects in core/shell quantum dots, significantly improving their photoelectric properties. This finding not only deepens the understanding of interface defect engineering but also provides new ideas for the development of semiconductor nanomaterials.

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