Abstract:Millimeter wave semiconductor devices (Tunnel Diode, GUNN, IMPATT diode, BARITT diode) generate microwaves for a wide range of frequencies. A millimeter wave MOSFET consists of an NMOSFET or FINFET, and a millimeter wave generating diode (an adjustable resistor – in the case of a GUNN diode) in the drain region. The MOSFET and the millimeter wave diode are integrated as one device. When a gate voltage and a drain voltage are applied, the MOSFET is turned on, so as the GUNN diode, which generates RF signals modulated by the high-frequency signals from the gate. If the MOSFET is turned off, the Tunnel Diode / GUNN diode is also off. For an embedded IMPATT or BARITT diode, the millimeter wave device won’t be turned off by the MOSFET, due to the avalanche process, but the output signal is modulated by both the gate and drain voltages. An Optoelectronic or Photonic CMOS field effect transistor includes a built-in laser in either or both of the source and drain regions, or in the well regions (for Depletion-mode CMOS lasers), and multiple photon sensors in the channel or well regions. The MOSFET, lasers, and photon sensors are fabricated as one integral transistor. When the MOSFET is on, the lasers are turned on. When the MOSFET is off, the lasers are off. The Photonic CMOS is light emitting device. Traditional CMOS transistors are not. There are various types of Millimeter wave and Photonic MOSFETs. In this paper, we will explore the advantages of these devices, including improved cutoff frequency (ft or fmax), and signal to noise ratio (S/N) for RF CMOS, and higher Ion / Ioff for RF ASICs. We would also like to look into the possibility of completely replacing the Silicon Photonics, which forms silicon-based IC and lasers separately but on the same wafer- with nonlinear optoelectronic and millimeter wave CMOS, due to improve flexibility, much higher speed, and lower costs.

CMOS-compatible, piezo-optomechanically tunable photonics for visible wavelengths and cryogenic temperatures

High-speed programmable photonic circuits in a cryogenically compatible, visible-NIR 200 mm CMOS architecture

CMOS-fabricated ultraviolet light modulators using low-loss alumina piezo-optomechanical photonic circuits

Electro-optic transduction in silicon via GHz-frequency nanomechanics

Silicon nitride stress-optic microresonator modulator for optical control applications

Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

Cryogenic operation of silicon photonic modulators based on DC Kerr effect

Piezoelectrically actuated high-speed spatial light modulator for visible to near-infrared wavelengths

High-speed photonic crystal modulator with non-volatile memory via structurally-engineered strain concentration in a piezo-MEMS platform

Non-volatile Tuning of Cryogenic Optical Resonators

Piezoelectrically driven Fano resonance in silicon photonics

Cryogenic Optical-to-Microwave Conversion Using Si Photonic Integrated Circuit Ge Photodiodes

A low-power integrated magneto-optic modulator on silicon for cryogenic applications

Piezoelectric actuation for integrated photonics

Silicon-Nitride Platform for Narrowband Entangled Photon Generation

High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate

Nanophotonic Pockels modulators on a silicon nitride platform

Monolithic piezoelectrically tunable hybrid integrated laser with sub-fiber laser coherence

An integrated millimeter-wave and photonic system-on-chip solution with extended ft and fmax: Can optoelectronic RF CMOS completely replace silicon photonics?

Magic silicon dioxide for widely tunable integrated photonics