Silicon-Nitride Platform for Narrowband Entangled Photon Generation

Sven Ramelow,Alessandro Farsi,Stéphane Clemmen,Daniel Orquiza,Kevin Luke,Michal Lipson,Alexander L. Gaeta
DOI: https://doi.org/10.48550/arXiv.1508.04358
2015-08-18
Abstract:CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.
Quantum Physics,Optics
What problem does this paper attempt to address?
The key problem that this paper attempts to solve is to develop an integrated photonic chip capable of generating narrow - band entangled photon pairs, especially the technology based on the silicon nitride (Si₃N₄) platform. Specifically, the researchers aim to achieve the following goals: 1. **Generate narrow - band photon pairs**: Existing integrated photonic chips face challenges in generating narrow - band photon pairs, especially when it is required to interface with quantum memories. This paper shows how to use high - Q Si₃N₄ micro - resonators to generate photon pairs with a bandwidth as low as 30 MHz, which is the narrowest bandwidth achieved in any fully monolithic integrated design so far. 2. **Precise wavelength control and tuning**: Through simple temperature control, the researchers have achieved precise stabilization and tuning of the photon central wavelength with an accuracy of < 10 MHz. This enables the generated photon pairs to precisely match the bandwidth requirements of quantum memories or quantum optomechanical systems. 3. **High - brightness and single - mode characteristics**: The experimental results show that the generated photon pairs have very high brightness, exceeding 10⁷ pairs per second, and their single - mode characteristics have been verified through autocorrelation measurements. In addition, the generated photon pairs also have time - bin entanglement characteristics, which are crucial for quantum networks. 4. **Time - bin entanglement verification**: It has been experimentally verified that the generated photon pairs are indeed in a high - fidelity time - bin entangled state, with an entanglement visibility of 90 ± 7%, far higher than the classical and CHSH limits. In conclusion, by demonstrating the high - performance photon - pair - generation technology based on the Si₃N₄ platform, this paper solves the current key challenges of integrated quantum - optical devices in generating narrow - band, high - brightness, controllable - wavelength, and high - fidelity entangled photon pairs. These achievements provide important technical support for future quantum communication networks and quantum - computing applications.