Abstract:Photonic integrated lasers with an ultra-low fundamental linewidth and a high output power are important for precision atomic and quantum applications, high-capacity communications, and fiber sensing, yet wafer-scale solutions have remained elusive. Here we report an integrated stimulated Brillouin laser (SBL), based on a photonic molecule coupled resonator design, that achieves a sub-100-mHz fundamental linewidth with greater than 10-mW output power in the C band, fabricated on a 200-mm silicon nitride (Si3N4) CMOS-foundry compatible wafer-scale platform. The photonic molecule design is used to suppress the second-order Stokes (S2) emission, allowing the primary lasing mode to increase with the pump power without phase noise feedback from higher Stokes orders. The nested waveguide resonators have a 184 million intrinsic and 92 million loaded Q, over an order of magnitude improvement over prior photonic molecules, enabling precision resonance splitting of 198 MHz at the S2 frequency. We demonstrate S2-suppressed single-mode SBL with a minimum fundamental linewidth of 71±18 mHz, corresponding to a 23±6-mHz2/Hz white-frequency-noise floor, over an order of magnitude lower than prior integrated SBLs, with an ∼11-mW output power and 2.3-mW threshold power. The frequency noise reaches the resonator-intrinsic thermo-refractive noise from 2-kHz to 1-MHz offset. The laser phase noise reaches -155 dBc/Hz at 10-MHz offset. The performance of this chip-scale SBL shows promise not only to improve the reliability and reduce size and cost but also to enable new precision experiments that require the high-speed manipulation, control, and interrogation of atoms and qubits. Realization in the silicon nitride ultra-low loss platform is adaptable to a wide range of wavelengths from the visible to infrared and enables integration with other components for systems-on-chip solutions for a wide range of precision scientific and engineering applications including quantum sensing, gravitometers, atom interferometers, precision metrology, optical atomic clocks, and ultra-low noise microwave generation.

Monolithic piezoelectrically tunable hybrid integrated laser with sub-fiber laser coherence

Frequency agile photonic integrated external cavity laser

Ultralow-noise frequency-agile photonic integrated lasers

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Hertz-linewidth and frequency-agile photonic integrated extended-DBR lasers

Reaching Fiber-Laser Coherence in Integrated Photonics.

A fully hybrid integrated erbium-based laser

Chip-Scale, Sub-Hz Fundamental Sub-kHz Integral Linewidth 780 nm Laser through Self-Injection-Locking a Fabry-Pérot laser to an Ultra-High Q Integrated Resonator

Near ultraviolet photonic integrated lasers based on silicon nitride

High-performance lasers for fully integrated silicon nitride photonics

Sub-Hz fundamental, sub-kHz integral linewidth self-injection locked 780 nm hybrid integrated laser

Ultrafast tunable lasers using lithium niobate integrated photonics

Ultraprecise optical-frequency stabilization with heterogeneous III-V/Si lasers

Ultrafast tunable photonic integrated Pockels extended-DBR laser

Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth

Integrated Pockels laser

Laser Soliton Microcombs Heterogeneously Integrated on Silicon

Low Noise, Tunable Silicon Photonic Lasers

Neodymium laser-pumped ultra-low noise tunable Brillouin fiber laser around 920 nm