Abstract:Cubic Cs2SnI6 perovskite is considered to be an ideal lead-free and air-stable alternative to traditional APbX(3) [A = Cs, K, CH3NH3, CH(NH2)(2)] perovskites for optoelectronic applications, such as solar cells and photodetectors. Herein, both experiments and theoretical calculations are carried out to study the lattice dynamics and temperature dependences of band gaps. Using Raman spectroscopy, we show that the obtained Cs2SnI6 film maintains a long-range crystalline structure of the cubic phase within 77-300 K, which is further confirmed via lattice dynamics calculations based on density functional theory (DFT). An ultrasmall net blueshift of 0.035 eV deduced from its temperature-dependent photoluminescence (PL) spectrum is observed as the temperature increases from 103 to 300 K, making it an ideal material for optoelectronic devices. Notably, this blueshift of the Cs2SnI6 film is significantly smaller than that of the DFT-calculated band-gap shift (similar to 0.085 eV) based on thermal expansion theory. This deviation is attributed to the strong phonon-electron (ph-e) interaction inherently occurring in Cs2SnI6 material, which counterbalances the thermal expansion effects. We further evaluate the magnitude of the ph-e interaction by fitting the full width at half maximum (FWHM) of the PL spectrum. The fitted Huang-Rhys factor (S) of 4.9 is consistent with reduced electronic dimensionality and increased vibrational degree of freedom, indicating stronger ph-e coupling strength in the Cs2SnI6 film compared with regular APbX(3)-type perovskites (S < 3.3). Adopting both thermal expansion and ph-e coupling effects, the ultrasmall band-gap shift is theoretically calculated and is in good agreement with the experimental blueshift of the band gap. In summary, our work illustrates the solid structural stability of Cs2SnI6 in both lattice and electronic structures, paving the way for the next generation of optoelectronic devices.

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