Investigating the interfacial charge transfer between electrodeposited BiVO 4 and pulsed laser-deposited Co 3 O 4 p-n junction photoanode in photoelectrocatalytic water splitting

C. Murugan,A. Soundarya Mary,R. Velmurugan,B. Subramanian,P. Murugan,A. Pandikumar

DOI: https://doi.org/10.1016/j.cej.2024.149104

IF: 15.1

2024-02-04

Chemical Engineering Journal

Abstract:The formation of a p-n junction consisting small-sized, and homogeneous material over the porous semiconductor is an effective strategy for improved photoelectrocatalytic (PEC) water oxidation. Here, the facile pulsed laser deposition (PLD) method was used to load small-sized Co 3 O 4 on BiVO 4 . The BiVO 4 /Co 3 O 4 (30 s) photoanode exhibits a higher photocurrent density of 4.66 mA cm −2 @ +1.23 V RHE which is ∼ 4-fold higher than pristine BiVO 4 . This improved PEC performance is due to the availability of more active sites, improved charge separation, rapid interfacial charge transfer process, higher injection ability, and higher water oxidation kinetics. The higher open circuit voltage (V OC ) of BiVO 4 /Co 3 O 4 offers the greater driving force for charge separation. On the other hand, the density functional theory (DFT) investigations were carried out for further understanding of the facile interfacial charge transfer process. The electrostatic plots from the DFT studies reveals that Co 3 O 4 has a deeper potential than BiVO 4 and this potential difference can induce a strong internal electric field across the junction which promotes facile charge transfer from BiVO 4 to Co 3 O 4 until equilibration. Under illumination, BiVO 4 and Co 3 O 4 act electron acceptor and hole acceptor, respectively. Hence, the hole accumulated water oxidation is taken place in the valence band maximum (VBM) of Co 3 O 4 for an enhanced PEC performance of the p-n junction photoanode.

engineering, chemical, environmental