Abstract:Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mode, we show that the lowest unoccupied and highest occupied electronic states of ≤3 nm thick SiO2-coated Si nanowells shift by up to 0.2 eV below the conduction band and ca. 0.7 eV below the valence band edge of bulk silicon, respectively. This nanoscale electronic structure shift induced by anions at surfaces (NESSIAS) provides the means for low-nanoscale intrinsic Si (i-Si) to be flooded by electrons from an external (bigger, metallic) reservoir, thereby getting highly electron- (n-) conductive. While our findings deviate from the behavior commonly believed to govern the properties of silicon nanowells, they are further confirmed by the fundamental energy gap as per nanowell thickness when compared against published experimental data. Supporting our findings further with hybrid density functional theory calculations, we show that other group IV semiconductors (diamond, Ge) do respond to the NESSIAS effect in accord with Si. We predict adequate nanowire cross-sections (X-sections) from experimental nanowell data with a recently established crystallographic analysis, paving the way to undoped ultrasmall silicon electronic devices with significantly reduced gate lengths, using complementary metal-oxide-semiconductor-compatible materials.

Frequency response of nanoscale core-shell of silicon wires doped with boron and nickel

Crossover From Quantum Mechanical Tunneling to the Superlinear Power Law in Silicon Microcrystal, Doped by Boron and Nickel

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Low Temperature Investigation of Electrical Conduction in Polysilicon: Simulation and Experiment

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers

Low-Temperature Electron Transport in [110] and [100] Silicon Nanowires: A DFT - Monte Carlo study

Transition of dominative conduction mechanism caused by nanostructures on silicon surface

Thermal Conductivity in Biphasic Silicon Nanowires

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating

Monte Carlo simulations for phonon transport in silicon nanomaterials

Boron-doped silicon nano-wires

Ultralow Thermal Conductivity in Si/GexSi1−x Core-Shell Nanowires

Simulation of Realistic Core-Shell Silicon Nanowires

Metal-insulator transition in films of doped semiconductor nanocrystals

Modulating the Thermal Conductivity of Silicon Nanowires Via Surface Amorphization

Thermal conductivity inhibition in phonon engineered core-shell cross-section modulated Si/Ge nanowires