Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Top-down patterning of topological surface and edge states using a focused ion beam

Stable topological insulators achieved using high energy electron beams

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Disorder Enabled Band Structure Engineering of a Topological Insulator Surface

Micro-metric Electronic Patterning of a Topological Band Structure Using a Photon Beam

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Reversible engineering of topological insulator surface state conductivity through optical excitation

Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements

Manipulating Surface States in Topological Insulator Nanoribbons

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Topological Control: Systematic Control of Topological Insulator Dirac Fermion Density on the Surface of Bi2Te3

Topological Surface States Protected From Backscattering by Chiral Spin Texture

Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

A topological crystalline insulator (TCI) phase via topological phase transition and crystalline mirror symmetry

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Edge Engineering of A Topological Bi(111) Bilayer

Building Topological Devices Through Emerging Robust Helical Surface States

Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator