Abstract:Time-dependent dielectric breakdown (TDDB) is a crucial issue for the dielectric reliability. In this work, we present a full three-dimensional mechanistic model for calculation of the TDDB process in polycrystalline thin films. The model is based on the multiphonon trap-assisted tunneling theory and takes into account the intrinsic three-dimensional discreteness of traps at the dielectric grain boundaries. The leakage current density is calculated by solving coupled three-dimensional master equation and Poisson equation. The net phonon emission associated with each charge trapping and release event is treated as a local point heat source, which then enters the Fourier heat equation for three-dimensional temperature distribution calculation. The generated trap is determined by local temperature and electric field, which is subsequently included in the next round of calculation of electric and thermal properties. A positive feedback loop gradually leads to an increase of trap density, temperature, and leakage current density, and finally the dielectric breakdown. Our model can, to a good approximation, reproduce the experimental leakage current density-voltage characteristics and the Weibull distribution of time to breakdown at different dielectric thicknesses, stress voltages, and environmental temperatures. We find that in realistic devices, the three-dimensional trap-to-trap transport of electrons contributes a non-negligible part to the leakage current when the dielectric approaches breakdown. Our approach of three-dimensional mechanistic simulation is computationally efficient such that evolution of 103 traps during the TDDB process can be easily performed on a standard desktop computer. https://doi.org/10.1103/PhysRevApplied.19.024008 © 2023 American Physical Society

SPICE simulation of the time-dependent clustering model for dielectric breakdown

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Nonlinear Fdtd Solution To The High-Field Conduction Model For Some Solid Dielectrics

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

A Stabilized and Well-Conditioned Marching-on-in Degree Method for Transient Analysis of Dielectric Objects

A Dielectric Breakdown Simulator Based on Monte Carlo Method

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

Three-Dimensional Mechanistic Modeling of Time-Dependent Dielectric Breakdown in Polycrystalline Thin Films

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

An Analytical Model for the 3D-RESURF Effect

A Unified TDDB Model for BEOL Dielectrics of Various Structures and Thick FEOL Dielectrics

Voltage-Driven Breakdown of Electronic Order

The electric field dependence of Cu migration induced dielectric failure in interlayer dielectric for integrated circuits

Correlation of trap generation to charge-to-breakdown (Q/sub bd/): a physical-damage model of dielectric breakdown

Transient simulation of dielectric breakdown during high-power microwave propagation based on the SETD method

Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs

Circuit-Level Delay Modeling Considering Both Tddb And Nbti

A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress