Abstract:Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation.

An Ultra-compact Nanophotonic Optical Modulator using Multi-State Topological Optimization

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Ultra-high extinction dual-output thin-film lithium niobate intensity modulator

Silicon Based Ultra-Compact Modulator with Photonic Crystal

High-speed electro-optic modulation in topological interface states of a one-dimensional lattice

Ultracompact optical modulator based on graphene-silica metamaterial.

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

Single nanowire thermo optic modulator based on Varshni shift

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

Development of Silicon Photonic Devices for Optical Interconnects

Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Metal-Optic Nanophotonic Modulators in Standard CMOS Technology

Integrated ultra-high-performance graphene optical modulator

All-optical modulator with photonic topological insulator made of metallic quantum wells

Low Dimensional Material based Electro-Optic Phase Modulation Performance Analysis

Ultra-compact plasmonic modulator for optical inteconnects

Silicon Optical Modulators for Data Transmission in Different Wavelength Bands.

Coupling-enhanced Dual ITO Layer Electro-absorption Modulator in Silicon Photonics