Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Coupling-enhanced Dual ITO Layer Electro-absorption Modulator in Silicon Photonics

Coupling-controlled Dual ITO Layer Electro-Optic Modulator in Silicon Photonics

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

0.52 V mm ITO-based Mach-Zehnder modulator in silicon photonics

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Heterogeneously Integrated ITO Plasmonic Mach-Zehnder Interferometric Modulator on SOI

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Hybrid Lithium Tantalite-Silicon Integrated Photonics Platform for Electro-Optic Modulation.

Development of Silicon Photonic Devices for Optical Interconnects

Indium Tin Oxide Based Dual-Polarization Electro-Optic Intensity Modulator on a Single Silicon Waveguide

Integrated silicon carbide electro-optic modulator

1Fj/bit Coupling-based ITO Monolithic Modulator in Integrated Photonics

Indium-Tin-Oxide for High-performance Electro-optic Modulation

Hybrid photonic-plasmonic electro-optic modulator for optical ring network-on-chip

Loss-Induced Transparency Based ITO Monolithic Modulator in Integrated Photonics

High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

Design of an Electro-Optic Modulator Based on a Silicon-Plasmonic Hybrid Phase Shifter

Silicon Based Ultra-Compact Modulator with Photonic Crystal

Theoretical investigation of ultracompact and athermal Si electro-optic modulator based on Cu-TiO2-Si hybrid plasmonic donut resonator.