Sol-gel spin-coated Y-doped SnO 2 nanostructured thin films for various optoelectronic device applications

Yathish Kumar,Harish Sharma Akkera,G. Srinivas Reddy,Nagaiah Kambhala
DOI: https://doi.org/10.1016/j.physb.2024.415881
IF: 2.988
2024-03-30
Physica B Condensed Matter
Abstract:The effect of various concentrations of Y-doped SnO 2 thin films (Y: SnO 2 ) on structural, optical, and electrical properties was investigated. XRD showed the polycrystalline tetragonal structure of all the films. SEM analysis showed homogenous growth of the films with spherical structure. XPS revealed the oxidation states of Sn, Y, and O, also it provides the presence of oxygen vacancies in Y: SnO 2 films. The UV–visible spectrometer studies showed that all the films were above 76% of optical transmittance in the visible region. The optical band gap energy was found to be 3.91 eV for pure SnO 2 , whereas Y: SnO 2 films have shown a decrease of band gap with Y content and reached down to 3.74 eV in 5 at% Y: SnO 2 film. The 3 at% Y: SnO 2 film showed the lowest sheet resistance ( R sh ) of 34.2 Ω/Sq and the highest figure of merit ( ɸ ) of 3.55 × 10 −3 Ω −1 among the others.
physics, condensed matter
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