Hole-Pinned Defect Clusters for a Large Dielectric Constant up to GHz in Zinc and Niobium Codoped Rutile SnO 2

Mengqi Jiang,Wanbiao Hu,Lilit Jacob,Qingbo Sun,Nicholas Cox,Doukyun Kim,Ye Tian,Luyang Zhao,Yang Liu,Li Jin,Zhuo Xu,Peng Liu,Gang Zhao,Jian Wang,Ju̅ras Banys,Chul-hong Park,Terry J. Frankcombe,Xiaoyong Wei,Yun Liu,Šaru̅nas Svirskas
DOI: https://doi.org/10.1021/acsami.1c09632
2021-11-02
Abstract:High permittivity materials for a gigahertz (GHz) communication technology have been actively sought for some time. Unfortunately, in most materials, the dielectric constant starts to drop as frequencies increase through the megahertz (MHz) range. In this work, we report a large dielectric constant of ∼800 observed in defect-mediated rutile SnO<sub>2</sub> ceramics, which is nearly frequency and temperature independent over the frequency range of 1 mHz to 35 GHz and temperature range of 50-450 K. Experimental and theoretical investigations demonstrate that the origin of the high dielectric constant can be attributed to the formation of locally well-defined Zn<sup>2+</sup>-Nb<sup>4+</sup> defect clusters, which create hole-pinned defect dipoles. We believe that this work provides a promising strategy to advance dipole polarization theory and opens up a direction for the design and development of high frequency, broadband dielectric materials for use in future communication technology.
materials science, multidisciplinary,nanoscience & nanotechnology
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