Abstract:Recently, defect luminescence-based ultralong persistent luminescent (PersL) materials have been increasingly appreciated for advanced applications. However, an in-depth understanding of trap manipulation is a big challenge in controlling trap distribution. In this work, we provide a complete understanding of defect-induced photoluminescence (PL) in Zn 2 GeO 4 and the significant role of different defects and defect complexes. Excitation-dependent tunable emissions from blue to green regions indicated different mechanisms for filling traps for different excitation energies. Time-resolved emission spectroscopy (TRES) revealed time-dependent trap distribution, shifting the PL band from blue to green. The existence of different electron–hole recombination pathways in different time windows shed light on the complex PL of Zn 2 GeO 4 . Systematic temperature-dependent PL studies imply different trapping and de-trapping processes. We demonstrate the activation energies for different trapping mechanisms and the role of negative thermal expansion (NTE) of Zn 2 GeO 4 in achieving the negative thermal quenching (NTQ) of PL. Further, the aliovalent doping of Pr 3+ was used for trap manipulation and introducing additional intermediate defect states. Density functional theory calculations as well as thermoluminescence and electron paramagnetic resonance studies revealed a reduction in defect formation energies for selective defects, four-fold increase in trap density, and trap re-shuffling to optimum trap depths (0.73 eV) on the doping of Pr 3+ . The rich trap distribution resulted in a two-fold increase in the quantum yield of green emissions (∼19%) due to Zn interstitial defects. Improved afterglow on UV charging and an increase in the afterglow time from a few minutes in undoped Zn 2 GeO 4 to an intense X-ray activated afterglow for 18 hours was observed in the Pr 3+ doped Zn 2 GeO 4 phosphor. Analysis of afterglow decay kinetics revealed the prominent trap-to-trap tunnelling mechanisms for long lifetimes. Impedance studies revealed the widening of electron channels and reduced resistance to electron movement with the incorporation of Pr 3+ ions that enhanced PersL. LED fabrication was carried out to demonstrate the potential of the Zn 2 GeO 4 phosphor for solid-state lighting. We believe that such kinetic and thermodynamic interpretation of defect chemistry will be helpful in tailoring the optoelectronic properties of native defect phosphors.

Enhancement of photoluminescence in V Z n ′′ defects activated Zn2-δSiO4-δ persistent phosphor by zinc deficiency

Effect of Zn deficiency on the enhancement of yellowish green persistent phosphor Dy3+-activated SrZn2(PO4)2

Enhanced afterglow performance of Zn2SiO4:Mn2+ by Pr3+ doping and mechanism

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Energy transfer of wide band long persistent phosphors of Sm3+-Doped ZrSiO4

Photoluminescence and Afterglow of Mn2+ Doped Lithium Zinc Silicate

Enhancing the mechanoluminescence of traditional ZnS:Mn phosphors via Li+ Co-doping

Tuning Emission Color and Improving the Warm-White Persistent Luminescence of Phosphor BaLu2Al2Ga2SiO12:Pr3+via Zn2+ Co-Doping.

Long Persistent And Photo-Stimulated Luminescence In Cr3+-Doped Zn-Ga-Sn-O Phosphors For Deep And Reproducible Tissue Imaging

The Synthesis and Afterglow Luminescence Properties of A Novel Red Afterglow Phosphor: Zro2:Sm3+,Sn4+

Zn2SiO4: Mn2+, Yb3+ long afterglow materials prepared employing Zn-based coordination polymer as precursor: Properties, mechanism and application

Effect of Si on near-infrared long persistent phosphor Zn 3 Ga 2 Ge 2− x Si x O 10 :2.5 %Cr 3+

Bright Yellow Luminescence from Mn2+-Doped Metastable Zinc Silicate Nanophosphor with Facile Preparation and Its Practical Application

A long persistent phosphor based on recombination centers originating from Zn imperfections.

Zinc Vacancy-Related Complex and Its Abnormal Photoluminescence in Zn+-implanted ZnO Single Crystals

Synthesis and luminescence studies of mixed phase LiCa3MgV3-XWXO12 phosphors for enhanced quantum yield

Defect‐Induced Self‐Reduction and Anti‐Thermal Quenching in NaZn(PO 3 ) 3 :Mn 2+ Red Phosphor

Synthesis and Luminescence Properties of a Broadband Near-Infrared Emitting Non-Gallate Persistent Luminescence Mg1.4Zn0.6SnO4:Cr3+ Phosphor

Eu 2 + -induced enhancement of defect luminescence of ZnS.

Trap engineering through chemical doping for ultralong X-ray persistent luminescence and anti-thermal quenching in Zn2GeO4

Probing Defects in ZnO by Persistent Phosphorescence