Abstract:Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 <a class="link-external link-http" href="http://neq.cm" rel="external noopener nofollow">this http URL</a>-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

Characterisation, simulation and test beam data analysis of stitched passive CMOS strip sensors

Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors

Characterisation and simulation of stitched CMOS strip sensors

TCAD Simulation of Stitching for Passive CMOS Strip Detectors

Characterization of passive CMOS strip sensors

Characterization of passive CMOS sensors with RD53A pixel modules

Study of CMOS Strip Sensor for Future Silicon Tracker

Investigation of HV/HR-CMOS Technology for the ATLAS Phase-II Strip Tracker Upgrade

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Testbeam Studies of Barrel and End-Cap Modules for the ATLAS ITk Strip Detector Before and after Irradiation

Study of Built-in Amplifier Performance on HV-CMOS Sensor for the ATLAS Phase-Ii Strip Tracker Upgrade

Fully Depleted Monolithic Active Microstrip Sensors: TCAD simulation study of an innovative design concept

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Subpixel Mapping and Test Beam Studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS Inner Detector Upgrade

Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

First Production of New Thin 3D Sensors for HL-LHC at FBK

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Characterization of irradiated RD53A pixel modules with passive CMOS sensors