Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics

Beatrice Bednarz,Maria-Andromachi Syskaki,Rohit Pachat,Leon Prädel,Martin Wortmann,Timo Kuschel,Shimpei Ono,Mathias Kläui,Liza Herrera Diez,Gerhard Jakob

DOI: https://doi.org/10.1063/5.0213731

IF: 4

2024-06-03

Applied Physics Letters

Abstract:Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying −2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.

physics, applied