Abstract:Charge trapping devices incorporating 2D materials and high-κ dielectrics have emerged as promising candidates for compact, multifunctional memory devices compatible with silicon-based manufacturing processes. However, traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed. Here, we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al 2 O 3 trapping layer with a MoS 2 channel, where charge traps reside within the Al 2 O 3 bulk confirmed by transfer curves with different gate-voltage sweeping rates and photoluminescence (PL) spectra. The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed (≈300 ns), an extremely low OFF current of 10 -14 A, a high ON/OFF current ratio of up to 107, and stable retention and endurance properties. Furthermore, the device with a simple symmetrical structure exhibits VD polarity-dependent reverse rectification behavior in the high resistance state (HRS), with a rectification ratio of 10 5 . Additionally, utilizing the synergistic modulation of the conductance of the MoS 2 channel by V D and V G , it achieves gate-tunable reverse rectifier and ternary logic capabilities.

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