Abstract:We present an atomistic-continuum model to simulate ultrashort-pulse laser melting processes in semiconductor solids on the example of silicon. The kinetics of transient nonequilibrium phase transition mechanisms is addressed with a molecular dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast diffusion of and heat conduction due to photoexcited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of freestanding Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the negative volume of melting of modeled Si material, −7.5%, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a fcc crystal structure.

$\textit{Ab initio}$ evidence for nonthermal characteristics in ultrafast laser melting

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Dynamics of Femtosecond Laser-Induced Melting of Silver

Pausing ultrafast melting by timed multiple femtosecond-laser pulses

The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability

Atomistic-continuum modeling of short laser pulse melting of Si targets

Interplay of thermal and non-thermal effects in x-ray-induced ultrafast melting

Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films

Ultrafast atomic view of laser-induced melting and breathing motion of metallic liquid clusters with MeV ultrafast electron diffraction

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Time Resolved Measurements of Melting and Solidification in Si Using Third Harmonic Generation of Light

Nonequilibrium Phase Change in Gold Films Induced by Ultrafast Laser Heating.

Molecular Dynamics Simulation Of Ultra-Fast Thermal Transition In Thin Foil Irradiated By High Power Ultra-Short Laser

Ultrafast carrier relaxation and its Pauli drag in photo-enhanced melting of solids

Unified theoretical description of thermal and nonthermal laser-induced ultrafast structural changes in solids

Experimental and Computational Analysis of Laser Melting of Thin Silicon Films

The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Melting and Thermal Ablation of a Silver Film Induced by Femtosecond Laser Heating: a Multiscale Modeling Approach