Embedded TFT nand-Type Nonvolatile Memory in Panel

Hung-Tse Chen,Szu-I. Hsieh,Chrong-Jung Lin,Ya-Chin King
DOI: https://doi.org/10.1109/led.2007.896894
IF: 4.8157
2007-06-01
IEEE Electron Device Letters
Abstract:A new nand-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (LTPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metal–oxide–nitride–oxide–silicon (MONOS) device based on sequential lateral solidification crystallization with a fully depleted poly-Si channel, an oxide–nitride–oxide stack gate dielectric, and a metal gate is integrated into a nand array. A nand test array based on p-channel LTPS TFTs exhibits good cycling endurance and data retention properties and negligible program and read disturbance. These results strongly support the claim that this TFT-MONOS device is a promising candidate for use in embedded nonvolatile memory for system-on-panel and 3-D IC applications.
engineering, electrical & electronic
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