Abstract:Semiconductor-sensitized TiO2 thin films with long-term air stability are attractive for optoelectronic devices and applications. Herein, we demonstrate the potential of the TiO2 thin film (∼800 nm in thickness) sensitized with a Sb2Se3 layer (∼350 nm) grown from solution spin coating and processed by annealing recrystallization at 300 °C for high-performance optical detection. The type-II band alignment, p-Sb2Se3/n-TiO2 heterojunction, and narrow band gap of Sb2Se3 (∼1.25 eV) endow the film photodetector with a large photocurrent, high switching stability and on/off ratio (>103), and fast response speeds (<20 ms) under the broadband visible–near-infrared irradiation in a zero-bias self-powered photovoltaic mode. In particular, the photodetector shows notable resistance to oxidation and moisture for long-term operation, which is linked to the modest surface oxidation (Sb–O) of Sb2Se3, as verified by X-ray photoelectron spectroscopy. The first-principles calculations show that a low and medium concentration of oxygen substitution for Se (OSe) and oxygen interstitial (Oi) with negative formation energies can lead to such a moderate surface oxidation but do not generate impurity states or just introduce a shallow-level acceptor state in the electronic structures of Sb2Se3 without degrading its optoelectronic performance. Our theoretical results offer a rational explanation for the air-stable and oxidation/moisture-resistant characteristics in moderately oxidized Sb2Se3 and may shed light on the surface oxidation–property relationship studies of other nonoxide semiconductor-sensitized devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c09180?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c09180</a>.Additional SEM images of Sb2Se3/TiO2 thin films; HRTEM and TEM images of Sb2Se3 and TiO2 particles; Tauc fitting curves for absorption spectra of bare TiO2 and Sb2Se3-sensitized TiO2 thin films; GGA-optimized structures, electronic band structures and DOS for pristine defect-free, VSe-defected, 4OSe, and Oi-defected Sb2Se3 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c09180/suppl_file/am0c09180_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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