Preparation of a direct Z-scheme thin-film electrode based on CdS QD-sensitized BiOI/WO3 and its photoelectrocatalytic performance

Qiang Bi,Yue Gao,Zengqiang Wang,Chenxuan Dang,Zekun Zhang,Lu Wang,Juanqin Xue
DOI: https://doi.org/10.1016/j.colsurfa.2020.124849
2020-08-01
Abstract:<p>To further improve the photoelectrocatalytic performance of the BiOI/WO<sub>3</sub> thin-film electrode, a CdS QD-sensitized direct Z-scheme CdS/BiOI/WO<sub>3</sub> ternary heterojunction thin-film electrode was prepared by the SILAR method. XRD, SEM, TEM, EDS, XPS, UV-vis spectroscopy, PL spectroscopy, EIS, and MS were used to perform phase characterization and photoelectric performance analysis of thin-film electrodes. Degradation of methylene blue solution (MB) experiments were used to explore the photoelectrocatalytic activity of thin-film electrodes. The degradation of MB by the CdS/BiOI/WO<sub>3</sub> thin-film electrode is as high as 98.3%, and its reaction rate constant (0.2521 min<sup>-1</sup>) is 118.4 times those of pure WO<sub>3</sub> thin-film electrodes. The improved photoelectrocatalytic activity of the sensitized thin-film electrode is mainly attributed to the direct Z-scheme mechanism of the ternary heterojunction thin-film electrode. Compared with the traditional mechanism of BiOI/WO<sub>3</sub> thin-film electrodes, the unique electron-hole pair migration method of the direct Z-scheme allows more photogenerated electrons and holes to participate in the photoelectrocatalytic degradation reaction and increases the active material ·O<sup>2-</sup>. This research broadens the direction for the selection of photocatalytic materials.</p>
chemistry, physical
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