Abstract:The term heterostructure usually refers to the combination of two or more semiconductor materials with different energy bandgaps. These structures play a pivotal role in modern semiconductor technologies: the band offset at the interfaces of the different materials provides a highly effective means for the manipulation of carriers, leading to revolutionary devices such as double-heterostructure semiconductor lasers operational at room temperature1 and heterostructure bipolar transistors capable of handling ultrahigh-frequency signals2. Generally, the fabrication of heterostructures requires advanced material growth techniques such as molecular beam epitaxy or metal–organic chemical vapour deposition to create clean, abrupt interfaces. In addition, lattice match among different materials in heterostructures is generally required, although accurately controlled strain due to limited lattice mismatch up to a few per cent can sometimes improve the device performance3. Now, writing in Nature Materials, Konstantin Novoselov and colleagues have demonstrated a new type of light-emitting diode (LED) based on heterostructures composed of 2D materials4. In contrast to traditional heterostructures in which different materials are epitaxially grown, 2D layered materials in this structure are stacked mechanically along the direction perpendicular to the 2D plane, and hence these layers are weakly bonded by van der Waals (vdW) forces. A schematic of a typical vdW heterostructure LED is shown in Fig. 1a. Moreover, traditional heterostructures usually consist of semiconductors only. In this work, the authors utilized three different kinds of 2D material: metallic graphene, insulating hexagonal boron nitride (hBN) and semiconducting monolayer transition metal dichalcogenides (TMDCs) with a direct bandgap such as molybdenum disulfide (MoS2). Previously, vdW heterostructures consisting of graphene/thin-film TMDC/graphene were also used for the realization of solar cells5. The band diagram of the LED is shown in Fig. 1b. The hBN layers adjacent to the monolayer MoS2 function as tunnelling barriers. Furthermore, these hBN layers separate the luminescent MoS2 from the metallic graphene to minimize quenching of the light emission. Additional hBN layers above and below the device protect the graphene electrodes without affecting their electrical performance, which is as a result of the atomically smooth surface of hBN and its lack of dangling bonds6. In monolayer semiconducting TMDCs such as MoS2, excitons (bound electron–hole pairs) dominate the emission due to the enhanced Coulomb interaction in these low-dimensional materials compared with bulk materials7. The injected high-energy electrons and holes relax to form excitons, and the recombination of these bound electron–hole pairs leads to light emission (Fig. 1c shows such a vdW LED under bias). The authors have also demonstrated LEDs based on a similar configuration but with multiple monolayer TMDCs, leading to a maximum external light emission efficiency approaching 10%, which is already comparable to the modern LEDs based on organic materials8. Compared with traditional heterostructures grown epitaxially, the 2D vdW heterostructures here do not require the lattice-match condition because of the weak interlayer bonding, and 2D layers with different lattice constants can be stacked together. This allows researchers to leverage a rich family of 2D materials with diverse electronic properties ranging from insulators, semiconductors and metals to superconductors9 to build heterostructures with desirable properties. Moreover, in view of the non-epitaxial fabrication processes and the innate thinness of these 2D vdW heterostructures, they are fully compatible with a wide range of substrates including flexible and transparent ones. In fact, in this work, the authors managed to fabricate vdW LEDs on a thin, transparent and flexible polyester film. Such vdW heterostructures on flexible substrates may find applications in future wearable electronic and optoelectronic devices. At present, the main factor limiting the technological development of such heterostructures is the lack of scalable synthesis strategies. Nevertheless, it is encouraging that large-scale techniques for the growth of simple vdW heterostructures10 and for the mechanical transfer of 2D layers11 have been demonstrated, suggesting that this hurdle might eventually be overcome. Although in this work the vdW heterostructure LEDs based on monolayer semiconducting TMDCs emit at a wavelength from 600 to 700 nm, it is possible to extend the emission wavelength to the telecommunication range (1.3 and 1.55 μm) and possibly to the mid-infrared, using the recently rediscovered black phosphorus12, 13, 14, 15. This emerging 2D material has a widely tunable electronic bandgap from 0.3 to about 2 eV (bulk to monolayer), covering a broad wavelength range. It might also be possible to construct double-heterostructure LEDs by sandwiching the narrow-bandgap black phosphorus between two large-bandgap TMDCs with opposite doping polarity, allowing for the confinement of light and carriers simultaneously1. Given the large variety of available 2D materials and the great flexibility in combining them, these heterostructures may not only compete as light emitters in the visible spectral range as shown by Novoselov and collaborators, but they could also trigger the development of applications in less explored electromagnetic spectral ranges such as in terahertz and mid-infrared. Download references

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