Topological Insulator Sb2Te3 Thin Films Grown by MBE
Jinfeng Jia,Guang Wang,Xia Zhu,Yaoyi Li,Jing Wen,Kunjin He,Lili Wang,Xucun Ma,Haijun Zhang,Zhong Fang,Qi‐Kun Xue
2010-01-01
Abstract:Submitted for the MAR10 Meeting of The American Physical Society Topological insulator Sb2Te3 thin films grown by MBE 1 JIN-FENG JIA, GUANG WANG, XIE-GANG ZHU, YAO-YI LI, JING WEN, Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China, KE HE, LILI WANG, XUCUN MA2, HAI-JUN ZHANG, ZHONG FANG, Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, P. R. China, QI-KUN XUE, Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China — Atomically flat Sb2Te3 thin films were grown by molecular beam epitaxy (MBE) on Si(111) substrate. Layer-by-layer growth was characterized by real time reflection high-energy electron diffraction (RHEED) intensity oscillations. In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) measurements reveal that the as-grown films are stoichiometric Sb2Te3. When the thickness is larger than two quintuple layers, the films show the predicted topological property with a single Dirac-cone on the surface. The measured band structure for the films with a thickness from one to five quintuple layers agrees well with our first principle calculations. 1The work is supported by NSFC and the National Basic Research Program from MOST of China. 2hjzhang@aphy.iphy.ac.cn Jinfeng Jia Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China Date submitted: 16 Nov 2009 Electronic form version 1.4