ZnGa2O4 polycrystalline thin-film preparation using hydrothermally synthesized nanoparticles

DOI: https://doi.org/10.1007/s10854-024-12652-y

2024-04-27

Journal of Materials Science Materials in Electronics

Abstract:Polycrystalline ZnGa 2 O 4 (ZGO) thin films were fabricated on quartz substrates using hydrothermally synthesized ZGO nanoparticles with Zn and O deficiencies. The ZGO thin films were formed by annealing the nanoparticle-coated substrate in air at the temperature range of 500–800 °C. Although the annealing process increased the crystallite size and weakened the quantum size effects decreasing the energy gap ( E g ), the ZGO thin film annealed at 800 °C still showed high E g value of 4.59 eV. A photocurrent ( I P ) was generated in the thin films at an applied voltage of 40 V under irradiation solar-blind (SB) light conditions (with a wavelength of 254 nm), whereas no I P was induced following exposure to ultraviolet light at 365 nm; that is, the ZGO thin films showed the capability to distinguish SB light and non-SB light. In addition, the repetition of the photocurrent response to SB light was confirmed for the ZGO thin film annealed at 800 °C, where the photocurrent increased with the applied voltage. The ratio of the I p to the dark current ( I D , current without irradiation) increased by a factor of 8.8 as the annealing temperature was increased from 500 to 800 °C owing to the decrease in I D . At high-annealing temperatures, the I D was decreased due to the improved crystallinity resulting from the increase in the number of oxygen vacancies. The present ZGO thin films and control of their I P characteristics by the annealing temperature during preparation can aid in future durable SB photodetector applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied