Abstract:In addition to the different technologies of silicon solar cells in crystalline form, TOPCon solar cells have an exceptionally great efficiency of 26%, accomplished by the manufacturing scale technique for industrialization, and have inordinate cell values of 732.3 mV open-circuit voltage (Voc) and a fill factor (FF) of 84.3%. The thickness of tunnel oxide, which is less than 2 nm in the TOPCon cell, primarily affects the electrical properties and efficiency of the cell. In this review, various techniques of deposition were utilized for the layer of SiOx tunnel oxide, such as thermal oxidation, ozone oxidation, chemical oxidation, and plasma-enhanced chemical vapor deposition (PECVD). To monitor the morphology of the surface, configuration of annealing, and rate of acceleration, a tunnel junction structure of oxide through a passivation quality of better Voc on a wafer of n-type cell might be accomplished. The passivation condition of experiments exposed to rapid thermal processing (RTP) annealing at temperatures more than 900 °C dropped precipitously. A silicon solar cell with TOPCon technology has a front emitter with boron diffusion, a tunnel-SiOx/n+-poly-Si/ SiNx:H configuration on the back surface, and electrodes on both sides with screen printing technology. The saturation current density (J0) for such a configuration on a refined face remains at 1.4 fA/cm2 and is 3.8 fA/cm2 when textured surfaces of the cell are considered, instead of printing with silver contacts. Following the printing of contacts with Ag, the J0 of the current configuration improves to 50.8 fA/cm2 on textured surface of silicon, which is moderately lesser for the metal contact. Tunnel oxide layers were deposited using many methods such as chemical, ozone, thermal, and PECVD oxidation are often utilized to deposit the thin SiOx layer in TOPCon solar cells. The benefits and downsides of each approach for developing a SiOx thin layer depend on the experiment. Thin SiOx layers may be produced using HNO3:H2SO4 at 60 °C. Environmentally safe ozone oxidation may create thermally stable SiOx layers. Thermal oxidation may build a tunnel oxide layer with low surface recombination velocity (10 cm/s). PECVD oxidation can develop SiOx on several substrates at once, making it cost-effective.

Unveiling the Photovoltaic Performance and Thermal Stability of n‐TOPCon, p‐TOPCon, and TOPCoRE Solar Cells Based on 110 μm Wafers

A Detailed Theoretical Analysis of TOPCon/TOPCore Solar Cells Based on p-type Wafers and Prognosticating the Device Performance on Thinner Wafers and Different Working Temperatures

Detailed Study on the Role of Nature and Distribution of Pinholes and Oxide Layer on the Performance of Tunnel Oxide Passivated Contact (TOPCon) Solar Cell

Analysis of passivation property using thin Al2O3 layer and simulation for realization of high-efficiency TOPCon cell

Analysis of Advanced TiO2/Si based Solar Cell Architecture: Improving PV Parameters and Thermal Stability

TOPerc solar cell: An integral approach of TOPCon and PERC architectures for achieving efficiency beyond 25%

Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

AFORS-HET-based numerical exploration of tunnel oxide passivated contact solar cells incorporating n- and p-type silicon substrates

Optimization of TOPCon Structured Solar Cell Using AFORS-HET

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Influence of rear surface pyramid base microstructure on industrial n-TOPCon solar cell performances

Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells

Ultra-thin silicon oxide tunnel layer passivated contacts for screen-printed n-type industry solar cells

Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells

Tunnel Oxide Deposition Techniques and Their Parametric Influence on Nano-Scaled SiOx Layer of TOPCon Solar Cell: A Review

Application of n‐Polysilicon Rear Emitter for High‐Efficiency p‐TOPCon Solar Cells

Selective tunnel oxide passivated contact on the emitter of large-size n-type TOPCon bifacial solar cells

Fundamentals, present status and future perspective of TOPCon solar cells: A comprehensive review

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method