Abstract:Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high mobility, high thermal stability, and high thermal conductivity. However, the interfaces between SiC and the corresponding substrate largely affect the performance of SiC-based electronics. It is therefore necessary to understand and design the interfacial thermal transport across the SiC/substrate interfaces, which is critical for the thermal management design of these SiC-based power electronics. This work systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K, respectively. We also show the contribution of the ITC resulting from elastic scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for 4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We further find the ITC contributed by the elastic scattering decreases with the temperature but remains at a high ratio of 67%~78% even at an ultrahigh temperature of 1000 K. The reason for such a high elastic ITC is the large overlap between the vibrational density of states of Si and SiC at low frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch mode. It is interesting to find that the inelastic ITC resulting from the phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz) can be negligible. That may be because of the wide frequency gap between Si and SiC, which makes the inelastic scattering among these phonons challenging to meet the energy and momentum conservation rules.

High-temperature effects for transition state calculations in solids

High-Temperature Effects for Transition State Calculations in Solids

Temperature effect on charge-state transition levels of defects in semiconductors

Effect of Nonequilibrium Transient Electronic Structures on Lattice Stability in Metals: Density Functional Theory Calculations

Thermal conductivity of intrinsic semiconductor at elevated temperature: role of four-phonon scattering and electronic heat conduction

Small-mass atomic defects enhance vibrational thermal transport at disordered interfaces with ultrahigh thermal boundary conductance

Quantitative predictions of the thermal conductivity in transition metal dichalcogenides: The impact of point defects in MoS$_2$ and WS$_2$ monolayers

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Improving the Density Functional Theory Prediction Accuracy for Elastic Moduli and Thermal Expansion of MoAlB, Fe2AlB2, and Mn2AlB2

Effect of Lattice Defects, Hydrogen Impurity and Temperature on Electronic Thermal Conductivity in First Wall Tungsten Materials

First-principles calculation of defect free energies: General aspects illustrated in the case of bcc-Fe

High-precision Measurements and First-Principles Explanation of the Temperature-Dependent C13 and N

Effects of boron defects on mechanical strengths of TiB2 at high temperature: ab initio molecular dynamics studies

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Comparative study of defect transition energy calculation methods: The case of oxygen vacancy in In 2 O 3 and ZnO

An extended computational approach for point-defect equilibria in semiconductor materials

Thermal conductivity of silicon at elevated temperature: Role of four-phonon scattering and electronic heat conduction

Violation of the T −1 Relationship in the Lattice Thermal Conductivity of Mg 3 Sb 2 with Locally Asymmetric Vibrations

First-principles calculations for point defects in solids

Temperature-transferable tight-binding model using a hybrid-orbital basis