Temperature-transferable tight-binding model using a hybrid-orbital basis

Martin Schwade,Maximilian J. Schilcher,Christian Reverón Baecker,Manuel Grumet,David A. Egger
DOI: https://doi.org/10.1063/5.0197986
IF: 4.304
2024-04-01
The Journal of Chemical Physics
Abstract:Finite-temperature calculations are relevant for rationalizing material properties, yet they are computationally expensive because large system sizes or long simulation times are typically required. Circumventing the need for performing many explicit first-principles calculations, tight-binding and machine-learning models for the electronic structure emerged as promising alternatives, but transferability of such methods to elevated temperatures in a data-efficient way remains a great challenge. In this work, we suggest a tight-binding model for efficient and accurate calculations of temperature-dependent properties of semiconductors. Our approach utilizes physics-informed modeling of the electronic structure in the form of hybrid-orbital basis functions and numerically integrating atomic orbitals for the distance dependence of matrix elements. We show that these design choices lead to a tight-binding model with a minimal amount of parameters that are straightforwardly optimized using density functional theory or alternative electronic-structure methods. The temperature transferability of our model is tested by applying it to existing molecular-dynamics trajectories without explicitly fitting temperature-dependent data and comparison with density functional theory. We utilize it together with machine-learning molecular dynamics and hybrid density functional theory for the prototypical semiconductor gallium arsenide. We find that including the effects of thermal expansion on the onsite terms of the tight-binding model is important in order to accurately describe electronic properties at elevated temperatures in comparison with experiment.
chemistry, physical,physics, atomic, molecular & chemical
What problem does this paper attempt to address?
This paper proposes a solution to the problem of efficiently establishing a transferrable tight-binding model to simulate the temperature-dependent properties of semiconductor materials at high temperatures. Traditional finite-temperature calculations are computationally expensive due to the requirement of large systems or long simulation times. To overcome this challenge, the researchers propose a tight-binding model using a hybrid orbital basis, which handles the distance dependence of matrix elements through numerical integration of atomic orbitals. The key to this method is the use of a small number of parameters that can be optimized directly using density functional theory or other electronic structure methods. The paper demonstrates the transferability of this model at different temperatures by applying it to existing molecular dynamics trajectories, without the need for specific fitting of temperature-dependent data, and comparing the results to density functional theory. By combining this model with machine learning molecular dynamics and hybrid density functional theory, and applying it to the typical semiconductor gallium arsenide (GaAs), the study finds that considering the effect of thermal expansion on the onsite term of the tight-binding model is crucial for accurately describing the electronic properties at high temperatures. Overall, this work provides a new tool for efficient and accurate prediction of the electronic structure of semiconductors under complex and high-temperature conditions.