Effects of co-doping the SnO2 electron transport layer with boron and indium on the photovoltaic performance of planar perovskite solar cells

Pareena G. Wagle,M. Thambidurai,Herlina Arianita Dewi,Wang Xizu,Nripan Mathews,Annalisa Bruno,Hung D. Nguyen,Monica Katiyar,Cuong Dang
DOI: https://doi.org/10.1039/d4se01125b
IF: 6.813
2024-11-07
Sustainable Energy & Fuels
Abstract:We have used a solution-based approach to incorporate boron (B) and indium (In) dopants into the conventional SnO 2 electron transport layer (ETL) to create high-performing planar perovskite solar cells (PSCs). By adding B and In in precise stoichiometric ratios to the standard SnO 2 precursor solution, we achieved a PCE of 20.05% compared to the PCE of 18.36% seen in devices having an undoped SnO 2 ETL. The addition of BIn to the SnO 2 ETL resulted in enhanced transparency and conductivity, resulting in higher current density ( J sc ) and fill factor (FF) in PSCs. Furthermore, due to the improved energy level alignment and lower work function of BIn–SnO 2 , higher V oc is also observed. Furthermore, the long-term stability of PSCs is significantly improved with the incorporation of the BIn-doped SnO 2 ETL.
materials science, multidisciplinary,chemistry, physical,energy & fuels
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