Dual-Module Ultrawide Dynamic-Range High-Power Rectifier for WPT Systems

Xiaochen Yu,Jinyao Zhang,Minzhang Liu,Xiantao Yang,Yi Huang,Ta-Jen Yen,Jiafeng Zhou
DOI: https://doi.org/10.3390/en17112707
IF: 3.2
2024-06-04
Energies
Abstract:Rectifier plays a pivotal role in wireless power transfer systems. While numerous studies have concentrated on enhancing efficiency and bandwidth at specific high-power levels, practical scenarios often involve unpredictable power inputs. Consequently, a distinct need arises for a rectifier that demonstrates superior efficiency across a broad range of input power levels. This paper introduces a high-power RF-to-DC rectifier designed for WPT applications, featuring an ultrawide dynamic range of input power. The rectification process leverages a GaN (gallium nitride) high electron mobility transistor (HEMT) to efficiently handle high power levels up to 12.6 W. The matching circuit was designed to ensure that the rectifier will operate in class-F mode. A Schottky diode is incorporated into the design for relatively lower-power rectification. Seamless switching between the rectification modes of the two circuits is accomplished through the integration of a circulator. The proposed rectifier exhibits a 27.5 dB dynamic range, achieving an efficiency exceeding 55% at 2.4 GHz. Substantial improvement in power handling and dynamic range over traditional rectifiers is demonstrated.
energy & fuels
What problem does this paper attempt to address?
This paper attempts to solve the problem of low efficiency of rectifiers in wireless power transfer systems (WPT) at different input power levels. Specifically, although traditional radio - frequency (RF) rectifiers are highly efficient at specific high - power levels, in practical applications, due to the unpredictability of input power, these rectifiers often cannot maintain high efficiency across the entire dynamic range. Therefore, this paper proposes a high - power RF - DC rectifier design with an ultra - wide dynamic range, aiming to improve the efficiency of rectifiers over a wide range of input powers. ### Main problems 1. **Limitations of traditional rectifiers**: - Traditional Schottky - diode - based rectifiers are low - cost, easy to manufacture, and highly efficient at high frequencies, but their maximum power - handling capacity is usually around 30 dBm (1 W), which cannot meet the requirements of high - power RF WPT applications. - Transistor - based rectifiers can achieve high power (10 W), but their effective working range is narrow, and high RF - DC conversion efficiency can only be obtained within a limited input power range. 2. **Challenges in practical application scenarios**: - In practical WPT applications, the input power at the receiving end will fluctuate significantly due to changes in the transmission distance. According to the Friis transmission formula: \[ P_r = P_t \cdot G_r \cdot G_t \left( \frac{\lambda}{4\pi R} \right)^2 \] where \( P_r \) is the received power, \( P_t \) is the transmitted power, \( G_r \) and \( G_t \) are the gains of the receiving and transmitting antennas respectively, \( \lambda \) is the wavelength of the transmission medium, and \( R \) is the distance between the transmitter and the receiver. Therefore, the input power at the receiving end will decrease significantly as the transmission distance increases. - Such fluctuations in input power require that the rectifier be able to maintain high efficiency over a wide power range to ensure the overall performance of the system. ### Solutions This paper proposes a dual - module rectifier design, which combines a low - power Schottky - diode rectifier and a high - power GaN HEMT rectifier, and enables seamless switching through a circulator. Specific features are as follows: - **Low - power Schottky - diode rectifier**: Suitable for lower input powers (13.5 dBm and below), achieving efficient rectification through optimizing the matching network and filter design. - **High - power GaN HEMT rectifier**: Suitable for higher input powers (27.5 dBm and above), achieving efficient rectification by utilizing the high electron mobility and high - power characteristics of GaN HEMT. - **Circulator**: Automatically selects the appropriate rectifier module to ensure efficient RF - DC conversion at different input power levels. ### Performance indicators - **Dynamic range**: 27.5 dB (from 13.5 dBm to 41 dBm, i.e., 22.4 mW to 12.6 W). - **Conversion efficiency**: Within the input power range, the RF - DC conversion efficiency exceeds 55% and can reach up to 72.8%. ### Conclusion This design not only solves the problem of low efficiency of traditional rectifiers at different input power levels but also demonstrates superior performance in high - power - handling capacity and wide dynamic range, providing strong support for future WPT applications.