Abstract:The junctions formed at the contact between metallic electrodes and semiconductor materials are crucial components of electronic and optoelectronic devices1. Metal–semiconductor junctions are characterized by an energy barrier known as the Schottky barrier, whose height can, in the ideal case, be predicted by the Schottky–Mott rule2–4 on the basis of the relative alignment of energy levels. Such ideal physics has rarely been experimentally realized, however, because of the inevitable chemical disorder and Fermi-level pinning at typical metal–semiconductor interfaces2,5–12. Here we report the creation of van der Waals metal–semiconductor junctions in which atomically flat metal thin films are laminated onto two-dimensional semiconductors without direct chemical bonding, creating an interface that is essentially free from chemical disorder and Fermi-level pinning. The Schottky barrier height, which approaches the Schottky–Mott limit, is dictated by the work function of the metal and is thus highly tunable. By transferring metal films (silver or platinum) with a work function that matches the conduction band or valence band edges of molybdenum sulfide, we achieve transistors with a two-terminal electron mobility at room temperature of 260 centimetres squared per volt per second and a hole mobility of 175 centimetres squared per volt per second. Furthermore, by using asymmetric contact pairs with different work functions, we demonstrate a silver/molybdenum sulfide/platinum photodiode with an open-circuit voltage of 1.02 volts. Our study not only experimentally validates the fundamental limit of ideal metal–semiconductor junctions but also defines a highly efficient and damage-free strategy for metal integration that could be used in high-performance electronics and optoelectronics.

HighвАРThroughput Computational Screening of AllвАРMXene MetalвАУSemiconductor Junctions for SchottkyвАРBarrierвАРFree Contacts with Weak FermiвАРLevel Pinning

Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes

Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials

All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors

Tuning the metal–semiconductor contact nature in MXene-based van der Waals heterostructures

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

The Interfacial Properties of Monolayer MX–Metal Contacts

Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures

Achieving ultra-low contact barriers in MX2/SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction

Revealing the Weak Fermi Level Pinning Effect of 2D Semiconductor/2d Metal Contact: A Case of Monolayer In2Ge2Te6 and Its Janus Structure In2Ge2Te3Se3

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Fermi-level depinning in metal-2D multilayered semiconductor junctions

Janus MoSH/WSi2N4 van der Waals Heterostructure: Two-Dimensional Metal/Semiconductor Contact

Mechanism of Charge Redistribution at the Metal-Semiconductor and Semiconductor-Semiconductor Interfaces of Metal-Bilayer MoS2 Junctions.

Asymmetric MXene/monolayer transition metal dichalcogenide heterostructures for functional applications

Enhancing the Contact Performance of Two-Dimensional Metals/In 2 S 3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Accelerated Mining of 2D Van der Waals Heterojunctions by Integrating Supervised and Unsupervised Learning