Abstract:There has been a growing interest in the development of efficient flexible organic solar cells (OSCs) due to their unique capacity to provide energy sources for flexible electronics. To this end, it is required to design a compatible interlayer with low processing temperature and high electronic quality. In this work, we present that the electronic quality of the ZnO interlayer fabricated from a low-temperature (130 °C) sol–gel method can be significantly improved by doping an organic small molecule, TPT-S. The doped TPT-S, on the one hand, passivates uncoordinated Zn-related defects by forming N–Zn bonds. On the other hand, photoinduced charge transfer from TPT-S to ZnO is confirmed, which further fills up electron-deficient trap states. This renders ZnO improved electron transport capability and reduced charge recombination. By illuminating devices with square light pulses of varying intensities, we also reveal that an unfavorable charge trapping/detrapping process observed in low-temperature-processed devices is significantly inhibited after TPT-S doping. OSCs based on PBDB-T-2F:IT-4F with ZnO:TPT-S being the cathode interlayer yield efficiencies of 12.62 and 11.33% on rigid and flexible substrates, respectively. These observations convey the practicality of such hybrid ZnO in high-performance flexible devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c23087?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c23087</a>.UV–vis absorption spectrum of pure and hybrid ZnO films; Tauc plots of ZnO, TPT-S, and TPT-doped ZnO films; AFM height images, FTIR spectra, and energy-level diagram of TPT-S and ZnO; device structure and chemical structure of the active layer; optimization of the TPT-S doping weight ratio; EQE spectra of three types of devices and corresponding EQE enhancement ratio; integrated current density; transmittance (T) spectra and total absorption (1 – R – T) spectra; J–V curves of electron-only devices; Jsc versus light intensity of three types of devices plotted in the log x–log y scale; extraction photocurrent transient in photo-CELIV experiments of three types of devices; and photovoltaic performance parameters of devices based on different TPT-S doping weight ratios (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c23087/suppl_file/am0c23087_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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