Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

Jason S Ross, Pasqual Rivera, John Schaibley, Eric Lee-Wong, Hongyi Yu, Takashi Taniguchi, Kenji Watanabe, Jiaqiang Yan, David Mandrus, David Cobden, Wang Yao, Xiaodong Xu

2017-02-08

Abstract:Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p–n junctions in a MoSe2–WSe2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p–n junction functions as a …