Abstract:Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al 2 O 3 ) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated. The Al 2 O 3 films were grown by atomic layer deposition using trimethylaluminum and water. The cycle-by-cycle etching was monitored throughout the entire atomic layer etching process time using in situ and in real-time spectroscopic ellipsometry. The studies revealed that the sequential surface reactions were self-limiting versus reactant exposure. Spectroscopic ellipsometry analysis also confirmed the linear removal of Al 2 O 3 . Various process pressures ranging from 50 to 200 Pa were employed for Al 2 O 3 etching. The Al 2 O 3 etch rates increased with process pressures: Al 2 O 3 etch rates of 0.92, 1.14, 1.22, and 1.31 Å/cycle were obtained at 300 °C for process pressures of 50, 100, 150, and 200 Pa, respectively. The Al 2 O 3 etch rates increased with the temperature from 0.55 Å/cycle at 250 °C to 1.38 Å/cycle at 350 °C. Furthermore, this paper examined the temperature dependence of the rivalry between the removal (Al 2 O 3 etching) and growth (AlF 3 deposition) processes using the reactants trimethylaluminum and hydrogen fluoride. The authors determined that 225 °C is the transition temperature between AlF 3 atomic layer deposition and Al 2 O 3 atomic layer etching. The high sensitivity of in vacuo x-ray photoelectron spectroscopy allowed the investigation of the interface reactions for a single etching pulse as well as the initial etch mechanism. The x-ray photoelectron spectroscopy measurements indicated that the fluorinated layer is not completely removed after each trimethylaluminum exposure. The Al 2 O 3 atomic layer etching process mechanism may also be applicable to etch other materials such as HfO 2 .

Thermal Atomic Layer Etching of Molybdenum Using Sequential Oxidation and Deoxychlorination Reactions

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

Molybdenum etching using an SF6, BCl3 and Ar based recipe for high aspect ratio MEMS device fabrication

Exploration of New Self-limiting Atomic Layer Etching Methods for Molybdenum

Studying the Atomic Layer Deposition of Molybdenum Oxide and Titanium–Molybdenum Oxide Films Using Quartz Crystal Microbalance

Chemical Mechanical Polishing of Molybdenum in Potassium Iodate-Based Acidic Slurries

Wafer-Scale ALD Synthesis of MoO3 Sulfurized to MoS2

Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing

Atomic Layer Deposition and Post-Growth Thermal Annealing of Ultrathin MoO3 Layers on Silicon Substrates: Formation of Surface Nanostructures

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Chemical Mechanical Polishing of Mo Using H2O2 as Oxidizer in Colloidal Silica Based Slurries

In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride

Kinetic control for planar oxidation of MoS$_2$

Inductively Coupled Plasma Etching Of Bulk Molybdenum

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

Interfacial Reactions of Mo with Al: Ion Mixing Versus Thermal Annealing

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge

Controllable preparation of monolayer MoO3/MoO by using plasma oxidation and atomic layer etching

Local Strain‐Dependent Etching Patterns of Chemical Vapor Deposited Molybdenum Disulfide

Unravelling chemical etchant influences during assisted wet-transfer to obtain high quality MoS 2 atomic layers