Abstract:Uniform porous germanium (PGe) nanostructures are formed by bipolar electrochemical etching (BEE) and characterized using nondestructive fast‐feedback methods. The physical properties of the PGe layers, such as thickness and porosity, can be tuned by adjusting the etching parameters of the BEE process. This enables the fabrication of large‐scale, homogeneous PGe nanostructures with on‐demand physical properties. Porous germanium (PGe) nanostructures attract a lot of attention for various emerging applications due to their unique properties. Consequently, there is an increasing need for the development of low‐cost synthesis routes that are compatible with large‐scale production. Bipolar electrochemical etching (BEE) is a widely used solution for producing porous Ge layers. However, the lack of controllable production of large‐scale uniform PGe layers is the limiting factor for mainstream applications. Large‐scale homogeneous PGe layers formation is demonstrated by improving the BEE process. The PGe structures demonstrate excellent homogeneity in thickness and porosity, with a relative variation of below 2% across the 100 mm wafer. Furthermore, this process enables accurate tuning of the PGe's physical properties through variation of the etching parameters. PGe structures with porosity ranging from 40% to 80% and an adjustable thickness, while preserving low surface roughness are demonstrated, giving access to a large variety of PGe nanostructures for a wide range of applications. Ellipsometry and X‐ray reflectivity are employed to measure the porosity and thickness of PGe layers, providing fast and non‐destructive methods of characterization. These findings lay the groundwork for the large‐scale production of high‐quality PGe layers with on‐demand characteristics.

Wafer-Scale Porous Germanium Bilayer Structure Formation by Fast Bipolar Electrochemical Etching

Electrochemical Pore Etching in N- and P-Type Ge

Large‐Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties

Potential monitoring during Ge electrochemical etching: Towards tunable double porosity layers

Achieving Porous Germanium from Both P- and N-Type Epitaxial Ge-on-Si Via Bipolar Potentiostatic Etching

Comprehensive investigation of Thermal Induced Reorganization of Porous-Germanium structures

Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching

Tailoring Ge membrane adhesion strength: Impact of growth parameters and porous layer thickness

Élaboration du Ge mésoporeux et étude de ses propriétés physico-chimiques en vue d'applications photovoltaïques

Electrochemically Etched Triangular Pore Arrays on GaP and Their Photoelectrochemical Properties from Water Oxidation

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

Tuning the Optical Anisotropy in Gradient Porous Germanium on Si Substrate

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Sustainable Production of Ultrathin Ge Freestanding Membranes

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach

Synthesis and Fast Exfoliation of Layered GeP Nanosheets for Advanced Li-Ion Batteries

Formation of hierarchical porous graphene films with defects using a nanosecond laser on polyimide sheet

Narrowing Working Voltage Window to Improve Layered GeP Anode Cycling Performance for Lithium-Ion Batteries.

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method