Abstract:We have systematically studied Zinc Oxynitride (ZnON) materials for thin film transistors in advanced display applications. The ZnON materials were deposited using a reactive sputtering process with a metallic Zn target in a gas mixture of Ar, N2 and O2. We previously optimized the gas mixture and RF power and found optimized process parameters for O2 and N2 flow rates and RF power. In this contribution, we report the material properties as a function of process pressure and temperature. We observed that at a relatively lower pressure of 5 mTorr, the material shows a cubic Zn3N2-like structure with a narrow band gap of 1.1 eV, high conductivity, high carrier density, and high carrier mobility; at medium pressure of approximately 13-15 mTorr, the material becomes nanostructured or amorphous ZnON (nc-ZnON or a-ZnON) with a band gap of approximately 1.3-1.5 eV; and at pressures higher than 20 mTorr, the material shows a hexagonal polycrystalline ZnO-like structure with a band gap of 3.1 eV. The deposition rate decreases but the band gap increases monotonically with increasing pressure; the Hall electron mobility decreases with increasing pressure in the range from 5 mTorr to 13 mTorr and changes very little in the high pressure regime; the conductivity and carrier density decrease with the increase of pressure from 5 mTorr to 17 mTorr and then increase with further increase of pressure, which is related to the material structure changes from Zn3N2-like to a-ZnON, and then to ZnO-like materials. The substrate temperature has little effect on the material properties. Increasing substrate temperature slightly increases the band gap, carrier concentration, and conductivity, but slightly decreases the carrier mobility. Finally, under the optimized conditions, the nc-ZnON films are made with an optical band gap of 1.3-1.5 eV, electron mobility above 80 cm2/Vs and electron density of 1 × 1018 cm-3, which are suitable for high quality TFTs in advanced display applications.

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